OPA2111AM ,Dual Low-Noise Difet® Operational AmplifierFEATURES APPLICATIONSl LOW NOISE: 100% Tested, 8nV/√Hz max at l PRECISION INSTRUMENTATION10kHzl DAT ..
OPA2111BM ,Dual Low-Noise Difet® Operational Amplifier®OPA2111Dual Low Noise Precision®Difet OPERATIONAL AMPLIFIER
OPA2111KM ,Dual Low-Noise Difet® Operational Amplifier®OPA2111Dual Low Noise Precision®Difet OPERATIONAL AMPLIFIER
OPA2111KP ,Dual Low-Noise Difet® Operational AmplifierFEATURES APPLICATIONSl LOW NOISE: 100% Tested, 8nV/√Hz max at l PRECISION INSTRUMENTATION10kHzl DAT ..
OPA211AID ,1.1nV/rtHz Noise, Low-Power, Precision Operational Amplifier 8-SOIC -40 to 125Features... 18 Application and Implementation...... 232 Applications..... 18.1 Application Informat ..
OPA211AIDGKR ,1.1nV/rtHz Noise, Low-Power, Precision Operational Amplifier 8-VSSOP -40 to 125Support &Product Order Tools &TechnicalCommunityFolder Now Documents SoftwareOPA211,OPA2211SBOS377J ..
P5506BVG , N-Channel Logic Level Enhancement Mode Field Effect Transistor
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OPA2111-OPA2111AM-OPA2111BM-OPA2111KM-OPA2111KP
Dual Low-Noise Difet(R) Operational Amplifier 8-PDIP
® OPA2111 Dual Low Noise Precision ® Difet OPERATIONAL AMPLIFIER FEATURES APPLICATIONS lLOW NOISE: 100% Tested, 8nV/√Hz max atlPRECISION INSTRUMENTATION 10kHz lDATA ACQUISITION lLOW BIAS CURRENT: 4pA maxlTEST EQUIPMENT lLOW OFFSET: 500μV max lPROFESSIONAL AUDIO EQUIPMENT lLOW DRIFT: 2.8μV/°C lMEDICAL EQUIPMENT lHIGH OPEN-LOOP GAIN: 114dB min lDETECTOR ARRAYS lHIGH COMMON-MODE REJECTION: 96dB min DESCRIPTION The OPA2111 is a high precision monolithic +V CC dielectrically isolated FET (Difet) operational ampli- 8 fier. Outstanding performance characteristics allow its use in the most critical instrumentation applications. Noise, bias current, voltage offset, drift, open-loop gain, common-mode rejection, and power supply re- –In ® jection are superior to BIFET amplifiers. Very low bias current is obtained by dielectric isola- tion with on-chip guarding. +In Noise-Free
Cascode* Laser trimming of thin-film resistors gives very low offset and drift. Extremely low noise is achieved with Output patented circuit design techniques. A cascode design allows high precision input specifications and reduced susceptibility to flicker noise. –V CC Standard dual op amp pin configuration allows up- 4 *Patented grading of existing designs to higher performance OPA2111 Simplified Circuit
levels. (Each Amplifier) ® ® BIFET National Semiconductor Corp., Difet Burr-Brown Corp. International Airport Industrial Park • Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: (520) 746-1111 • Twx: 910-952-1111 • Cable: BBRCORP • Telex: 066-6491 • FAX: (520) 889-1510 • Immediate Product Info: (800) 548-6132 © 1984 Burr-Brown Corporation PDS-540E Printed in U.S.A. October, 1993 SBOS140
