OPA124PB ,Low Noise Precision Difet® Operational AmplifierOPA124®OPA124®Low Noise Precision Difet OPERATIONAL AMPLIFIER
OPA124U ,Low Noise Precision Difet® Operational AmplifierFEATURES APPLICATIONSl LOW NOISE: 6nV/√Hz (10kHz) l PRECISION PHOTODIODE PREAMPl LOW BIAS CURRENT: ..
OPA124UA ,Low Noise Precision Difet® Operational AmplifierFEATURES APPLICATIONSl LOW NOISE: 6nV/√Hz (10kHz) l PRECISION PHOTODIODE PREAMPl LOW BIAS CURRENT: ..
OPA128KM ,Difet Electrometer-Grade OPERATIONAL AMPLIFIER®OPA128®Difet Electrometer-GradeOPERATIONAL AMPLIFIER
OPA128KM ,Difet Electrometer-Grade OPERATIONAL AMPLIFIERFEATURES APPLICATIONSl ULTRA-LOW BIAS CURRENT: 75fA max l ELECTROMETERl LOW OFFSET: 500μV max l MAS ..
OPA128LM ,Difet Electrometer-Grade OPERATIONAL AMPLIFIER®OPA128®Difet Electrometer-GradeOPERATIONAL AMPLIFIER
P500-G120-WH , TBU® P500-G and P850-G Protectors
P500-G200-WH , TBU® P500-G and P850-G Protectors
P502-02SCL , Low Phase Noise VCXO (24MHz to 50MHz)
P502-35OC , 750kHz - 800MHz Low Phase Noise Multiplier VCXO
P502-37OC , 750kHz - 800MHz Low Phase Noise Multiplier VCXO
P502-38OC , 750kHz - 800MHz Low Phase Noise Multiplier VCXO
OPA124-OPA124P-OPA124PB-OPA124U-OPA124UA
Low Noise Precision Difet Operational Amplifier
OPA124 ® OPA124 ® Low Noise Precision Difet OPERATIONAL AMPLIFIER FEATURES APPLICATIONS lLOW NOISE: 6nV/√Hz (10kHz)lPRECISION PHOTODIODE PREAMP lLOW BIAS CURRENT: 1pA maxlMEDICAL EQUIPMENT lLOW OFFSET: 250μV maxlOPTOELECTRONICS lLOW DRIFT: 2μV/°C maxlDATA ACQUISITION lHIGH OPEN-LOOP GAIN: 120dB minlTEST EQUIPMENT lHIGH COMMON-MODE REJECTION: 100dB min lAVAILABLE IN 8-PIN PLASTIC DIP AND 8-PIN SOIC PACKAGES Substrate +V CC DESCRIPTION 8 7 The OPA124 is a precision monolithic FET opera- –In tional amplifier using a Difet (dielectrical isolation) 2 manufacturing process. Outstanding DC and AC per- +In formance characteristics allow its use in the most 3 critical instrumentation applications. (2) Noise-Free Cascode Bias current, noise, voltage offset, drift, open-loop Output gain, common-mode rejection and power supply re- 6 jection are superior to BIFET and CMOS amplifiers. Difet fabrication achieves extremely low input bias 2kΩ 2kΩ (1) 10kΩ Trim currents without compromising input voltage noise 1 performance. Low input bias current is maintained (1) Trim 10kΩ over a wide input common-mode voltage range with unique cascode circuitry. This cascode design also 5 2kΩ 2kΩ –V allows high precision input specifications and reduced CC susceptibility to flicker noise. Laser trimming of thin- 4 OPA124 Simplified Circuit film resistors gives very low offset and drift. Compared to the popular OPA111, the OPA124 gives NOTES: (1) Omitted on SOIC. (2) Patented. comparable performance and is available in an 8-pin PDIP and 8-pin SOIC package. ® BIFET National Semiconductor Corp., ® Difet Burr-Brown Corp. International Airport Industrial Park • Mailing Address: PO Box 11400, Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd., Tucson, AZ 85706 • Tel: (520) 746-1111 • Twx: 910-952-1111 Internet: http://www.burr-brown.com/ • FAXLine: (800) 548-6133 (US/Canada Only) • Cable: BBRCORP • Telex: 066-6491 • FAX: (520) 889-1510 • Immediate Product Info: (800) 548-6132 ® © 1993 Burr-Brown Corporation PDS-1203C Printed in U.S.A. March, 1998 1 OPA124 SBOS028
