OP11FY ,Quad Matched 741-Type Operational AmplifiersIllllllllllrlllllllllllllrlllllllt A II A I An n.-, II-L..L...Iuuau IVfdllJlIBllI 1 mtganfmie:dt 11 ..
OP11GP ,Quad Matched 741-Type Operational AmplifiersSPECIFICATIONS(@ V = 15 V, T = 25C, unless otherwise noted)ELECTRICAL
OP11GP ,Quad Matched 741-Type Operational AmplifiersGENERAL DESCRIPTIONThe OP11 provides four matched 741-type operational amplifiers14-Lead Hermetic D ..
OP14CP ,DUAL MATCHED HIGH PERFORMANCE OPERATIONAL AMPLIFIERSANALOG Dual Matched high Performance
DEVICES Operational Amplifiers
0P-04/0P-14
F EATURES pi ..
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OP-MA OP-04E OP-04 OP-MC
OP-14A ..
OP14EP ,DUAL MATCHED HIGH PERFORMANCE OPERATIONAL AMPLIFIERSGENERAL DESCRIPTION . V.
The OP-04/O P-14 series of dual generaI-purpose operational TO-100 (K-Suf ..
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OP09EY-OP11FY
Quad Matched 741-Type Operational Amplifiers
Cy, ANALOG Quad Matched
DEVICES 741 "Type Operational Amplifiers
OP-UB/OP-H
FEATURES . PIN CONNECTIONS
. anmnleed Itos #...e.wPT-wt6.._.l. soopv Max
. Guaranteed Hatched CMRR ................ MdB Min
q Guaranteed Matched Vos .................. 750W Max
0 RC/RH4138 Direct msp1trturrttant (09-99)
0 memm mm: Replacement (OP-M) “m (A)
. Low Noise MN (Al Tic: -
. SIiIcon-Nitrlde Pmmuon our W B
O lnhmal Frequency Computation our (Bl
. Low Crossover Dhlorllon "” (Bl
q Continuous Short-CIrcult Protection --IN tttl
. Low Input Blu Current v-
G Avaiiable in Die Form
14~PIN HERMETIC DIP (Y-suffix)
I P-S m
ORDERING IN FORMATION t EPOXY D Pt " x)
T “25-1: ___._______'3£E‘.;‘§E______ OPERATING
C MAX Genoa LEG TEMPERATURE - a a _
tnth 14m pusnc zo-conucr RANGE g v d r: g
omav- _ - 7 i a' i T . V
os 0mm" - opnAncrasa m F'" n Ltii'j: mm Cir E mm”
OPOQEY 43m; CE Es] mm,
os - " COM "t (A) Ci E .mw)
OPHEY OPHEP - V, rr Eu-
25 OPHBY‘ - - MIL MN (B) Cii] E "MC)
- OPOQFP - 4" m) LE -CE) 4m)
25 0P11FY OPHFP - XIND nuns) CE Ciiil cum;
59 OPI ICY1883 - .. MIL tkc. Cir 3 N.C.
- opus -
tur - cm IGS - X1ND op-nmcmas 15-P1N SOL
' Fordevicesprocessedin tatalcamplianctt mMiL-STD-883,add1883 aner part LCC tsaute)
number. Consult lacxory for M3 data sheet. (RC-Sumx) W11
t Bum-in is avaiiabia on mmmcial and industrial temperature range parts in
CarDIP. plastic DIP. and TO-can packages.
SIMPLIFIED SCHEMATIC (One of Four Ampimers is Shown)
4 OUTPUT
0P-09/0P-11
GENERAL DESCRIPTION
The OP-09 and OP-11 provide four matched 741-type opera-
tional amplifiers in a singte14-pin DIP package. The OP-ll is
pin compatible with the LM148, LM348, RM4156, and HA4741
amplifiers. The OP-09 is pin compatible with the RM4136 and
R04136. The amplifiers are matched for common-mods
rejection ratio and offset voltage which is very important in
designing instrumentation amplifiers. In addition, the ampli-
tier is degigned to have equal positive-going and negative-
going slew rates. This is an important consideration for good
audio system performance.
Each of the fouramplifiars has the proven OP-02 advantages
of low noise, low drift, and excelient Iong-term stability. Pre-
cision Monolithics’ exclusive Silicon~Nltride "Triple Passiva~
tion" procea reduces "popcorn noise", provides high relia-
bility, and aSSures long-term stability of parameters.
The OP-OSI and 0P-11 are ideal for use in designs requiring
minimum space and cost while maintaining OP-Ott-tYP:)
performance.
OP-OQ's and 0P-11's with processing perthe requirements of
MIL-STD-883 are availabie. For dual-741-type versions. see
the OP-04/14 data sheet.
ABSOLUTE MAXIMUM RATINGS (Note 1)
Supply Vnitaga ..-..-..iq-.-t.F.........P_.""... 122 V
OP-OQGFI and OP-1 IGR (Only) - ..... t18V
Differential Input Voltage .. ................... 130V
Input Voltage -..-..r.-.r_ ... Supply Voltage
Output Short-Circuit Duration ....... ' ........................ Continuous
(One Amplifier Only)
Storage Temperature Range
RC, Y-Package ..-----.--- -65''C to +150°C
P-Package r""'"'""'"""''"'""'''""""""',"" -epo to +125°C
Lead Temperature Range (Soldering. 60 soc) .............. 300°C
Junction Temperature (T) 'ni..b.._r.-... 455°C to +150°C
Operating Temperature anga
OP-OQA. OP~098 ..iFr--r-..-.- -titp'G to +125°C
OP-09E ............................................................ 0°C to +70°C
OP-09F -..........--..o.-..--. Mty't1 to +85°C
OP-t IA, 0P-11B.
OP-11C, OP-1 IARC ..................... . ............ -55''C to +125°C
OP-11E ......................................... tPC to +70°C
OP-1 IF, 0P-1tG ......................................... -40''O to +85°C
PACKAGE TYPE Ast (Note 2) le UNITS
id-Pin Hermetic 019m 108 " 'CN)
14-Pin Plastic DIP tin 53 39 "CM!
ZG-Cmtact LCC (RC) 98 33 mm
16-Pin SOL (s: 98 30 “cm
NOTES:
1. Absolute maximum ratings apply to both DICE and packaged parts unless
otherwise noted.
2. t, is tptmittad tor waist case mounting conditions. Is,, Ir, A it spkfied for
device in socket for CerDIP. P-DiP, and LOG packages; Nies specified for
device sotdamd to printed circuit board for SOL package.
MATCHING CHARACTERISTICS at Vs = i15V, TA = +25'' C. 33 s won, unless otherwise noted.
OP-OBA, OP-OSE OP-OSB, OP-OSF
OP-11A, t3P..11 E OP-tt B, OP-MF
mam SYMBOL CONDITIONS MIN TYP MAX MIN TYP MAX um
Input Offset Voltage Match avos - 0.5 0.75 - " 2.0 mV
Common-Modo Rejection ACMRR Vow = 1121! - 1 20 - 1 20 tNN
Ratio Match ch = tq2ht 94 120 - 94 120 - dB
MATCHING CHARACTERISTICS at I/s " 115V, -55''0 s T, s. +125°CforOP-09A. OP-09B, OP-11A, OP-IIB, tpt) s. T, s+TODC
tor OP-09E, OP-11E and 40°C I: T, 5 +85°C for OP-ON', OP-11F. Rs 5 1009, unless otherwise noted.
OP-OWN, OP-DSE 1N'-09B, OP-OSF
OP-MA, OP-ME OP-IIB, OP-MF
MAHETER SYMBOL CONDITIONS Mitt TYP MAX MIN TYP MAX UNITS
Input Offset Voitage Match avos - 0.6 1.0 - 1.0 AS mV
Common-Mode Rejection aCMRR ch _ x12v - 3.2 20 - 3.2 20 tNN
Ratio Match Vcr, ' $121! 94 110 - 94 110 - dB
iP,41MP-1 1
ELECTRICAL CHARACTERISTICS (Each Amplifier) at Vs = 115V TA = 25'' C, unless otherwise noted.
OP-09A/ E OP-OBB/ F
0P-11A/E OP-11B/F ' OP-11C/G
PARAMETER SYHBOL CONDITIONS MIN TYP MAX MIN TYP MAX MIN TYP MAX UNITS
input Offset Voluga Vos Rs s 10m - 0,3 0.5 - 0.6 2.5 - 1.2 5.0 mV
Input t2ffsgt Current los -r.r_re " 20 - 25 50 - 75 200 nA
Input Bias Current 13 - 180 300 - 300 500 - 300 500 nA
tnptrrt1ttsistattr;e
' . ' - , w ' 7 -
Differential Mode Hm [Nata tr, D17 029 0.1 o 17 01 (ht Mn
Input Voltage Range NR :12 i 13 - :12 t 13 - :12 tla - v
Gotttrmm-Mode
= + < - n... -
Rejmm Ratio CMRR ch ”1211115- 10m 100 120 100 120 70 100 dB
Power Supply vs = t5 to ttsv.
PSHR - 4 32 - 4 32 - 1
Rejection Ratio Rs s 10m 0 100 MN
Output Voltage Swing Yo h P. 2110 f.. 11 113 - , 11 1:13 - tll _+t3 - V
La o-SI 1 Volta
Ct', 'tttt W Ave M Mn, v.3 " 1-101; 100 850 - 100 650 - 50 500 - V/mV
Power Consumption
p = - - -
(Note t) a V0 IN 105 180 123 180 210 340 mW
Input Noise Voltage 9W 0.1112 ta 10Hz - 0.7 - - 0.7 - - 0.7 - isVrp
_ fo=10th - 18 - - 13 - ~ 13 -
$22.23” Wttatter e" to" 10on - 14 - - 14 - - 14 - nw/iF'
to = 100on - 12 ....e - 12 - - 12 -
Inpm N015! Currant [np-p 0.1112 to 10Hz - 17 - - 17 - - 17 - pAp_p
_ to =10Hz - 1.3 - - " - - 1.8 -
"tht'" cum” In to _ 100He - IS - _ tdi - - 1.5 - 11AM Hz
10 = 1013on - 1.2 - - 1.2 a - 1.2 -
Channel Separation CS 100 130 - 100 130 w - 130 - dB
Slew Rate (Note 2) SR 0.7 1,0 - 0.7 1.0 - 0.7 1.0 - V/ps
Mrgtr-Siimal
= 11 , - 11 1 - w
Bandwidth (Note 2) v0 20%, 6 6 ll 18 “Hz
Closed-Loop
= +1. .4 .0 - A 3,0 - M . -
Bandwidth (Note 4) aw AVCL 0 2 3 2 2 3 0 MHz
niseiime (Note 2) tr AV - +1. VIN - SOmV - Ito 145 - 110 145 - 110 145 ns
Overshout (Note 21 OS - Mi 25 P..- 15 25 - 15 25 %
NOTES:
t Tom dissipation for ati four trmptifitrrs in package.
2. Sample tested.
3. Guaranteed by input Mas current
4 Guammead by risetime.
tP-tMP-ll
ELECTRICAL CHARACTERISTICS (Each Amplifier) at Vs = 115V, -66''C s TA S +125" C, unless otherwise noted.
OP-DSA OP-OSB ,
. OP-MA OP-tttt Orr-tttt
PARAMETER SYMBOL CONDlTiONS MIN TYP MAX MIN TYP MAX MIN TYP MAX UNITS
Input Offset Vanage Vos R35 10m - 0.4 1.0 - 1.0 3.5 - 1.5 6.0 mV
Average Input Offset < - 2 0 10 - ' o m - 4 0 M NPC;
Voixage Drift (Note 3) Tth/os Rs - 10kt1 . _ "
input ottsWDurreot los - 20 40 - 40 80 - 250 300 nA
Average Input Ott8et T0193 - th1 0.3 - 0.3 as - 0.3 or: nA/''C
Current Drift (Note 3)
Input G, Cunent its - 200 375 - 400 650 - A00 800 nA
Mpttt Voltage Range NR t 12 t13 - t 12 :13 w 132 i 13 w v
Comman-Mode
= + < 1 120 - 100 120 - 70 100 - dB
Remum Ratio CMRR vo, :tliN, Rs-10kn 00
Power Suppty PSRR Vs'' $6 to :15V. - 4 32 - 4 32 - 10 100 AN
Rejecticn Ratio Rss 10en
Laript-8lgnal - - 50 250 - 25 100 - V/mV
muse Gain Avo RL it an, Ito i10V so 250 "
Output Voltage Swing Ito 8L2 2kn 111 t13 - i1! 1-13 - $11 -+13 - V
Pttwttr Consumption d vo= W -.. M5 200 - t15 200 - 250 400 mW
(Note 1)
ELECTRICAL CHARACTERISTICS (Each Amplifier) at IIs =11 w, tPCs. T, s; +70°Cfor OP-OQE. OP-1 1E,-400C s T, f +85°C
for OP-09F, OP11F, OP-1 1G, unles; p.thtrttjtttyMed.
OP-OSE O P-OSF
OP-ME OP-‘H F orh.MG
PARAMETER SYHSOL CONDITIONS MIN TYP MAX MIN TYP MAX MIN TYP MAX UNITS
input Offset Voltage Vos Rss 10ktt - 0.4 0.8 - thit 3.0 - 1.5 tho mit
Average Input Offset <
- 2.0 10 - 4.0 15 - 4.0 - V
Voltage Drift TCVOS Rss; 10m u "
Input Offset Current tos - 14 30 - 40 60 - 250 300 nA
Average mio Ottsgt
T I - (ht 0.3 - tra 06 - 0.3 0.6 nA/°C
Curran! Drift (Note 31 C OS
Input Bias, Current In - 200 350 - 400 550 - 400 800 nA
Input Voltage Range IVR t12 t 13 - Itil 1:13 - 112 113 - V
Common-Modo
= + - 1 - -
Rejection Ratio GMRR vo, -12v, Rs S.10kn 100 120 100 20 70 100 dit
Power Supply vs = 1510 t15V,
Hajaction Ratio PER" Rss. 10m 4 32 4 32 lil 100 "WV
Largs-Signal _
Voltage Gain Avo RI. P, 2kn, V0 _ tttN 50 250 SD 250 25 300 - V/mV
Output Vnhage Swing vo flc2t 2ktt tll A13 - tll :13 - All t10 - V
Power Consumption -
(Note I) Pd vo= tN 115 200 [ 115 200 250 400 mW
NOTES.'
I, Total dissipation tor all four ampMitrrs in package.
2. Sample lastad.
3, Guaranteed but not tamed.
tPAB/OP-l 1
DICE CHARACTERISTICS (125°C TESTED MCE AVAILABLE)
owycnuaun.‘
. iNVERTINGlNPUT(A)
. NttNtrWERTlNGtNPUT (A)
. OUTPUT (A)
. OUTPUT(B)
. NONrtWERrMGtNPuT (B)
. mvsrmuc INPUT (B)
. murmurs INPUT tcl
. NONINVEMING INPUHC)
10. OUTPUTIC)
1 t2, OUTPUTm)
13. NONIHVERTING INPUT (D)
" mvsn‘rma INPUT(D)
=lua II. h
. OUTPU‘HA)
'. 'NVERTTNG INPUT“)
. NONlNiTtNG"eUTtAy
. NONINVERTING 1NPUT(B)
. INVERTING INPU'HB)
. ouwuna)
. 01mm (e)
. INVERYING INPUT (0)
NONIHVERTING INFUT GO
. NONINVERTING INPUTW)
. INVERTING INPUT tm
. OUTPUT (D)
DIE SIZE 0.086 X 0.072 Inch. 6192 sq. mlls
(2.18 X 1.83 mm, 3.99 sq. mm)
DIE SIZE 0.086 X 0.072 Inch, 6192 sq. mils
(2.18 x 1.83 mm, 3.99 sq. mm)
Either or both V+ pads may be used without any change in mtrttrrmanstt.
WAFER TEST LIMITS at V5: x15V, TA=25'C for OP-09I11N, OP-09111t9 and OP-OQI11GR devices; TA: 125''C for
OP.09111NT and OP~0911IGT devices, unless otherwise noted.
OP-tNay OP-DQGR
OP-OSNT OP-OSN
t9P-T1NT OP-11 N 0P-11GT OP-MG op-ttart
PARAMETER SYMBOL CONDITIONS LIMIT LIMIT t.Mrr UMIT LIMIT UNITS
Input offset Vatlago 1tos Rs s 10m 1.0 0.5 3.5 2.6 5.0 mV MAX
Input thtset Current los 20 20 50 50 200 nA MAX
Input Bias Cummt la 300 300 500 500 500 nA MAX
Input Voltage Bangs NR t 12 t t2 i t2 $12 tt2 V MIN
Common-Moda vcu = , 12V
Rehab" Ratio CMRR Rs s10kn 100 100 100 too 70 dB MlN
Power Supply Vs= $51110 ttW
Rejection Ratio PSRR R85 10110 32 32 32 32 100 tNN MAX
. Rrp. tokn tll t12 tll 112 tll
thttputWftagty Swing Ito nt=2m tlt :11 :11 ttt :11 VMtN
Larger-Signal Rs 2 2m
Voltage Gain Ava v0: 11W 50 100 til) 100 50 V/mV MIN
Paws! Consumption V = 0
(Four Amplifiers) tl No Lead 200 180 200 180 340 mW MAX
NOTES:
For 25%: characteristics ot NT & GT devices. see N & (3 characteristics, rest-Vee.
Electrical tests are performed at wafer probe to the timits shown. Due to vttriatiorts in assembly methods and normai yield loss, yield after packaging is not
guaranteed tor standard product dice. Consult factory to negotiate specifications based on dlce lot qualification through sample lot assembly and testing.
TYPICAL ELECTRICAL CHARACTERISTICS at Vs = i15V, TA = +25'' C. unless otherwise noted,
OPA19NT OP-OSN OP-OBGT OP-OQGR
tNMI NT OP-11N OP-MGT OP-I, G OP-M GR
PARAMETER SYMBOL CONDITIONS TYPICAL TYPICAL TYPICAL TYPICAL WHCAL UNITS
AV = 1
Slew Rate SR R L 2 21m 1 1 , 1 1 Nlyts
Unity Gain Bandwidth GBW 2 2 . 2 2 2 MHz
AV = 100
Channel Separation GS f= 10kHz 130 130 130 130 130 dB
As = 1en
