Home ›
N >
N23 >
NY5W-K,mfg:TAKAMISAWA, Ultra slim type with 5 mm thickness, Low power consumption and high sensitivity
Partno |
Mfg |
Dc |
Qty |
Available | Descript |
NY5W-K |
TAKAMISAWA |
N/a |
618 |
|
Ultra slim type with 5 mm thickness, Low power consumption and high sensitivity |
NY7805C
NY7808C
NY911 OKI
NY5W-K , Ultra slim type with 5 mm thickness, Low power consumption and high sensitivity
NYC0102BLT1G , Sensitive Gate Silicon Controlled Rectifiers
NZD560A ,NPN Low Saturation TransistorNZD560ANZD560ANPN Low Saturation Transistor• These devices are designed for high current gain and l ..
NZF220DFT1 ,EMI Filter with ESD ProtectionELECTRICAL CHARACTERISTICSSymbol Characteristic Min Typ Max UnitV Zener Breakdown Voltage, @ I = 1 ..
NZF220DFT1G ,EMI Filter with ESD ProtectionMaximum ratings applied to the device are individual stress limit values (notnormal operating condi ..
P0111 ,0.8A SCRsapplicationsTO-92 SOT-223where available gate current is limited, such as(P01xxA) (P01xxN)ground fa ..
P0111DA ,0.8A SCRSP01 Series®SENSITIVE 0.8A SCRs MAIN
P0111DA1AA3 ,0.8A SCRsFEATURES:ASymbol Value UnitGI0.8 AT(RMS)KV /V400 and 600 VDRM RRMI5 to 200 μAGTDESCRIPTIONThanks to ..