NX8511UD ,1550 nm InGaAsP MQW-DFB TOSA for long haul 2.5 Gb/s applications.FEATURES• PEAK EMISSION WAVELENGTH: λp = 1 550 nm• OPTICAL OUTPUT POWER: Pf = 2.0 mW• WIDE OPERATIN ..
NXA025A0X-P , NaOSTM NXA025 SIP Non-isolated Power Modules
NY5W-K , Ultra slim type with 5 mm thickness, Low power consumption and high sensitivity
NYC0102BLT1G , Sensitive Gate Silicon Controlled Rectifiers
NZD560A ,NPN Low Saturation TransistorNZD560ANZD560ANPN Low Saturation Transistor• These devices are designed for high current gain and l ..
NZF220DFT1 ,EMI Filter with ESD ProtectionELECTRICAL CHARACTERISTICSSymbol Characteristic Min Typ Max UnitV Zener Breakdown Voltage, @ I = 1 ..
P0080SDL , gas plasma arresters-package dimensions/specifications
P0080SDL , gas plasma arresters-package dimensions/specifications
P01 ,0.8A SCRSapplicationsTO-92 SOT-223where available gate current is limited, such as(P01xxA) (P01xxN)ground fa ..
P0102AL 5AA4 ,Sensitive gate SCRsElectrical characteristics P010xxA and P010xxNSymbol Test conditions Value UnitI Max. 200 µAGTV = 1 ..
P0102AL5AA4 ,Sensitive gate SCRsapplications GAwhere available gate current is limited, such as Kground fault circuit interrupters, ..
P0102AL5AA4 ,Sensitive gate SCRsFeatures• On-state rms current, 0.8 A• Repetitive peak off-state voltage up to 600 V• Triggering ga ..
NX8511UD
