| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| NX6410GH |
RENESAS |
N/a |
300 |
 |
LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION |
NX6410GH-AZ NEC
NX641A01 ALCATEL
NX6508GH NEC
NX6410GH , LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
NX7002AK ,60 V, single N-channel Trench MOSFETApplications• Relay driverHigh-speed line driver•• Low-side loadswitchSwitching circuits•4. Quick r ..
NX7002AKS ,60 V, dual N-channel Trench MOSFETApplications Relay driver Low-side load switch High-speed line driver Switching circuits1.4 Qui ..
NX7002AKW ,60 V, single N-channel Trench MOSFETApplications• Relay driverHigh-speed line driver•• Low-side loadswitchSwitching circuits•1.4 Quick ..
NX7361JB-BC ,1310 nm InGaAsP MQW FP pulsed laser diode for OTDR application (150 mW min). With FC-UPC connector.FEATURES DESCRIPTIONNEC's NX7361JB-BC is a 1310 nm developed strained Mul-• HIGH OUTPUT POWER:tiple ..
P0080SB-L , gas plasma arresters-package dimensions/specifications
P0080SCL , gas plasma arresters-package dimensions/specifications
P0080SCL , gas plasma arresters-package dimensions/specifications
