IC Phoenix
 
Home ›  NN23 > NVD6820NL,90V, 50A, 16.7 mOhm, Single N-Channel DPAK Logic Level Power MOSFET
NVD6820NL Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
NVD6820NLONN/a10000avai90V, 50A, 16.7 mOhm, Single N-Channel DPAK Logic Level Power MOSFET


NVD6820NL ,90V, 50A, 16.7 mOhm, Single N-Channel DPAK Logic Level Power MOSFETELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
NVD6820NLT4G , Power MOSFET 90 V, 17 m, 50 A, Single N.Channel
NVD6824NL ,100V, 41A, 20 mOhm, Single N-Channel DPAK Logic Level Power MOSFETELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
NVD6824NLT4G , Power MOSFET 100 V, 20 m, 41 A, Single N.Channel
NVD6828NL ,90 V, 41 A, 20 mOhm N-Channel Logic Level DPAK MOSFETELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
NVD6828NLT4G , Power MOSFET 90 V, 20 m, 41 A, Single N.Channel
OZ-SS-105L1 , 16A Miniature Power PC Board Relay
OZ-SS-148L , 16A Miniature Power PC Board Relay
OZ-SS-148L , 16A Miniature Power PC Board Relay
P0080ECL , SIDACtor® Device
P0080ECL , SIDACtor® Device
P0080ECL , SIDACtor® Device


NVD6820NL
90V, 50A, 16.7 mOhm, Single N-Channel DPAK Logic Level Power MOSFET
NVD6820NL
Power MOSFET
90 V, 17 m, 50 A, Single NïChannel
Features Low RDS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AECïQ101 Qualified and PPAP Capable These Devices are PbïFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Symbol Value Unit
DrainïtoïSource Voltage VDSS 90 V
GateïtoïSource Voltage VGS 20 V
Continuous Drain Cur-
rent RJC (Notes 1 & 3)
Steady
State
TC = 25°C ID 50 A
TC = 100°C 35
Power Dissipation RJC
(Note 1)
TC = 25°C PD 100 W
TC = 100°C 50
Continuous Drain
Current RJA (Notes 1,
2 & 3) Steady
State
TA = 25°C ID 10 A
TA = 100°C 7.0
Power Dissipation RJA
(Notes 1 & 2)
TA = 25°C PD 4.0 W
TA = 100°C 2.0
Pulsed Drain Current TA = 25°C, tp = 10 s IDM 310 A
Operating Junction and Storage Temperature TJ, Tstg ï55 to
Source Current (Body Diode) IS 50 A
Single Pulse DrainïtoïSource Avalanche
Energy (TJ = 25°C, VGS = 10 V, IL(pk) = 31 A,
L = 0.3 mH, RG = 25 )
EAS 144 mJ
Lead Temperature for Soldering Purposes
(1/8 from case for 10 s) 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
JunctionïtoïCase ï Steady State (Drain) RJC 1.5 °C/W
JunctionïtoïAmbient ï Steady State (Note 2) RJA 38 The entire application environment impacts the thermal resistance values
shown, they are not constants and are only valid for the particular conditions
noted. Surfaceïmounted on FR4 board using a 650 mm2, 2 oz. Cu pad. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
DPAK
CASE 369C
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENT
90 V 16.7 m @ 10 V
RDS(on)
50 AV(BR)DSS
20.4 m @ 4.5 V
http://2
NïChannel
Gate
Drain3
Source
Drain = Year = Work Week
6820L = Device Code = PbïFree Package
Device Package Shipping†
ORDERING INFORMATION
NVD6820NLT4G DPAK
(PbïFree)
2500/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED