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NUS2501W6T1ONN/a200avaiIntegrated NPN Digital transistor with switching diode array


NUS2501W6T1 ,Integrated NPN Digital transistor with switching diode arrayELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)ACharacteristic Symbol Test Conditions ..
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NUS2501W6T1
Integrated NPN Digital transistor with switching diode array
NUS2501W6
Integrated NPN Digital
Transistor with Switching
Diode Array
This new option of integrated devices is designed to replace a
discrete solution of a single transistor with three switching diodes.
BRT (Bias Resistor Transistor) contains a single transistor with a
monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. The BRT technology eliminates
these individual components by integrating them into a single device,
therefore integration of a single BRT with three switching diodes
results in a significant reduction of both system cost and board space.
This new device is offered in the SC−88 surface mount package.
Features
Single SC−88 Surface Mount Package Moisture Sensitivity Level 1
Benefits
Integration of Six Discrete Components Integrated Solution Offers Cost and Space Savings Integrated Solution Improves System Reliability
Applications
Wireless Phones Handheld Products Notebook Computers LCD Display Panels
MAXIMUM RATINGS (TA = 25°C unless otherwise noted.)
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