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NTS0101GF
Dual supply translating transceiver; open drain; auto direction sensing
1. General descriptionThe NTS0101 is a 1-bit, dual supply translating transceiver with auto direction sensing,
that enables bidirectional voltage level translation. It features two 1-bit input-output ports
(A and B), one output enable input (OE) and two supply pins (VCC(A) and VCC(B)). VCC(A)
can be supplied at any voltage between 1.65 V and 3.6 V and VCC(B) can be supplied at
any voltage between 2.3 V and 5.5 V, making the device suitable for translating between
any of the voltage nodes (1.8 V, 2.5 V, 3.3 V and 5.0 V). Pins A and OE are referenced to
VCC(A) and pin B is referenced to VCC(B). A LOW level at pin OE causes the outputs to
assume a high-impedance OFF-state. This device is fully specified for partial power-down
applications using IOFF. The IOFF circuitry disables the output, preventing the damaging
backflow current through the device when it is powered down.
2. Features and benefits Wide supply voltage range: VCC(A): 1.65Vto 3.6 V and VCC(B): 2.3Vto 5.5V Maximum data rates: Push-pull: 50 Mbps IOFF circuitry provides partial Power-down mode operation Inputs accept voltages up to 5.5 V ESD protection: HBM JESD22-A114E Class 2 exceeds 2500 V for A port HBM JESD22-A114E Class 3B exceeds 8000 V for B port MM JESD22-A115-A exceeds 200V CDM JESD22-C101E exceeds 1500V Latch-up performance exceeds 100 mA per JESD 78B Class II Multiple package options Specified from 40 Cto+85 C and 40 Cto+125C
3. ApplicationsI2 C/SMBus UART GPIO
NTS0101
Dual supply translating transceiver; open drain; auto
direction sensing
Rev. 4 — 4 September 2012 Product data sheet
NXP Semiconductors NTS0101
Dual supply translating transceiver; open drain; auto direction sensing
4. Ordering information
5. Marking[1] The pin 1 indicator is located on the lower left corner of the device, below the marking code.
6. Functional diagram
Table 1. Ordering informationNTS0101GW 40 Cto+125C SC-88 plastic surface-mounted package; 6 leads SOT363
NTS0101GV 40 Cto+125C TSOP6 plastic surface-mounted package (TSOP6); 6 leads SOT457
NTS0101GM 40 Cto+125C XSON6 plastic extremely thin small outline package; no leads;
6 terminals; body 1 1.45 0.5 mm
SOT886
NTS0101GF 40 C to +125 C XSON6 plastic extremely thin small outline package; no leads;
6 terminals; body 11 0.5 mm
SOT891
NTS0101GS 40 C to +125C XSON6 extremely thin small outline package; no leads; terminals; body 1.0 1.0 0.35 mm
SOT1202
Table 2. MarkingNTS0101GW s1
NTS0101GV s01
NTS0101GM s1
NTS0101GF s1
NTS0101GS s1
NXP Semiconductors NTS0101
Dual supply translating transceiver; open drain; auto direction sensing
7. Pinning information
7.1 Pinning
7.2 Pin description
8. Functional description[1] H= HIGH voltage level; L= LOW voltage level; X= don’t care; Z = high-impedance OFF-state.
[2] When either VCC(A) or VCC(B) is at GND level, the device goes into power-down mode.
Table 3. Pin descriptionVCC(A) 1 supply voltage A
GND 2 ground (0V) 3 data input or output (referenced to VCC(A)) 4 data input or output (referenced to VCC(B)) 5 output enable input (active HIGH; referenced to VCC(A))
VCC(B) 6 supply voltage B
Table 4. Function table[1]1.65 V to VCC(B) 2.3 V to 5.5 V L Z Z
1.65 V to VCC(B) 2.3 V to 5.5 V H input or output output or input
GND[2] GND[2] XZ Z
NXP Semiconductors NTS0101
Dual supply translating transceiver; open drain; auto direction sensing
9. Limiting values[1] The minimum input and minimum output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] VCCO is the supply voltage associated with the output.
[3] For SC-88 and SC-74A packages: above 87.5 C the value of Ptot derates linearly with 4.0 mW/K.
For XSON6 packages: above 118 C the value of Ptot derates linearly with 7.8 mW/K.
10. Recommended operating conditions[1] The A and B sides of an unused I/O pair must be held in the same state, both at VCCI or both at GND.
[2] VCC(A) must be less than or equal to VCC(B).
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0V).
VCC(A) supply voltage A 0.5 +6.5 V
VCC(B) supply voltage B 0.5 +6.5 V input voltage A port and OE input [1][2] 0.5 +6.5 V
B port [1][2] 0.5 +6.5 V output voltage Active mode [1][2]
A or B port 0.5 VCCO +0.5 V
Power-down or 3-state mode [1]
A port 0.5 +4.6 V
B port 0.5 +6.5 V
IIK input clamping current VI <0V 50 - mA
IOK output clamping current VO <0V 50 - mA output current VO =0Vto VCCO [2]- 50 mA
ICC supply current ICC(A) or ICC(B) -100 mA
IGND ground current 100 - mA
Tstg storage temperature 65 +150 C
Ptot total power dissipation Tamb= 40 C to +125C [3] -250 mW
Table 6. Recommended operating conditions [1][2]VCC(A) supply voltage A 1.65 3.6 V
VCC(B) supply voltage B 2.3 5.5 V
Tamb ambient temperature 40 +125 C
t/V input transition rise and fall rate A or B port; push-pull driving
VCC(A) = 1.65 V to 3.6V;
VCC(B)= 2.3 V to 5.5V 10 ns/V
OE input
VCC(A) = 1.65 V to 3.6V;
VCC(B)= 2.3 V to 5.5V 10 ns/V
NXP Semiconductors NTS0101
Dual supply translating transceiver; open drain; auto direction sensing
11. Static characteristics[1] VCCO is the supply voltage associated with the output.
Table 7. Typical static characteristicsAt recommended operating conditions; voltages are referenced to GND (ground=0 V); Tamb = 25 C. input leakage
current
OE input; VI = 0 V to 3.6 V; VCC(A)= 1.65Vto 3.6V;
VCC(B)= 2.3Vto 5.5V 1 A
IOZ OFF-state output
current
A or B port; VO =0V orVCCO; VCC(A) = 1.65 V to 3.6 V;
VCC(B)= 2.3 V to 5.5V
[1] -- 1 A
IOFF power-off
leakage current
A port; VI or VO = 0 V to 3.6V;
VCC(A) =0V; VCC(B) =0Vto5.5V 1 A
B port; VI or VO = 0 V to 5.5V;
VCC(B) =0V; VCC(A) =0Vto3.6V 1 A input
capacitance
OE input; VCC(A) = 3.3 V; VCC(B) =3.3V - 1 - pF
CI/O input/output
capacitance
A port - 4 - pF
B port - 7.5 - pF
A or B port; VCC(A) = 3.3 V; VCC(B) =3.3V - 11 - pF
Table 8. Typical supply currentAt recommended operating conditions; voltages are referenced to GND (ground=0 V); Tamb = 25 C.
1.8 V 0.1 0.5 0.1 1.5 0.1 4.6 A
2.5 V 0.1 0.1 0.1 0.8 0.1 3.8 A
3.3 V - - 0.1 0.1 0.1 2.8 A
Table 9. Static characteristicsAt recommended operating conditions; voltages are referenced to GND (ground=0V).
VIH HIGH-level
input voltage
A port
VCC(A) = 1.65 V to 1.95V;
VCC(B)= 2.3 V to 5.5V
[1] VCCI 0.2 - VCCI 0.2 - V
VCC(A) = 2.3 V to 3.6V;
VCC(B)= 2.3 V to 5.5V
[1] VCCI 0.4 - VCCI 0.4 - V
B port
VCC(A) = 1.65 V to 3.6V;
VCC(B)= 2.3 V to 5.5V
[1] VCCI 0.4 - VCCI 0.4 - V
OE input
VCC(A) = 1.65 V to 3.6V;
VCC(B)= 2.3 V to 5.5V
0.65VCC(A) -0.65VCC(A) -V
NXP Semiconductors NTS0101
Dual supply translating transceiver; open drain; auto direction sensing[1] VCCI is the supply voltage associated with the input.
[2] VCCO is the supply voltage associated with the output.
VIL LOW-level
input voltage
A or B port
VCC(A) = 1.65 V to 3.6V;
VCC(B)= 2.3 V to 5.5V 0.15 - 0.15 V
OE input
VCC(A) = 1.65 V to 3.6V;
VCC(B)= 2.3 V to 5.5V 0.35VCC(A) - 0.35VCC(A)V
VOH HIGH-level
output voltage= 20A
VCC(A)= 1.65Vto 3.6V;
VCC(B)= 2.3Vto 5.5V
[2] 0.67VCCO - 0.67VCCO -V
VOL LOW-level
output voltage
A or B port; IO =1 mA [2]
VI 0.15 V;
VCC(A)= 1.65Vto 3.6V;
VCC(B)= 2.3Vto 5.5V 0.4 - 0.4 V input leakage
current
OE input; VI = 0 V to 3.6 V;
VCC(A)= 1.65Vto 3.6V;
VCC(B)= 2.3Vto 5.5V 2- 12 A
IOZ OFF-state
output current
A or B port; VO =0V orVCCO;
VCC(A)= 1.65Vto 3.6V;
VCC(B)= 2.3 V to 5.5V
[2] - 2- 12 A
IOFF power-off
leakage
current
A port; VI or VO = 0 V to 3.6V;
VCC(A) =0V; VCC(B) =0Vto5.5V 2- 12 A
B port; VI or VO = 0 V to 3.6V;
VCC(B) =0V; VCC(A) =0Vto3.6V 2- 12 A
ICC supply current VI = 0 V or VCCI; IO = 0A [1]
ICC(A)
VCC(A) = 1.65 V to 3.6 V;
VCC(B)= 2.3 V to 5.5V
-2.4 - 15 A
VCC(A) = 3.6 V; VCC(B)=0V - 2.2 - 15 A
VCC(A) = 0 V; VCC(B) =5.5V - 1- 8 A
ICC(B)
VCC(A) = 1.65 V to 3.6 V;
VCC(B)= 2.3 V to 5.5V
-12 - 30 A
VCC(A) = 3.6 V; VCC(B) =0V - 1- 5 A
VCC(A) = 0 V; VCC(B) =5.5V - 1 - 6 A
ICC(A) + ICC(B)
VCC(A) = 1.65 V to 3.6 V;
VCC(B)= 2.3 V to 5.5V 14.4 - 30 A
Table 9. Static characteristics …continuedAt recommended operating conditions; voltages are referenced to GND (ground=0V).
NXP Semiconductors NTS0101
Dual supply translating transceiver; open drain; auto direction sensing
12. Dynamic characteristicsTable 10. Dynamic characteristics for temperature range 40 C to +85 C[1]Voltages are referenced to GND (ground=0 V); for test circuit see Figure 7; for wave forms see Figure 5 and Figure6.
VCC(A) = 1.8 V 0.15 VtPHL HIGH to LOW
propagation delay
A to B - 4.6 - 4.7 - 5.8 ns
tPLH LOW to HIGH
propagation delay
A to B - 6.8 - 6.8 - 7.0 ns
tPHL HIGH to LOW
propagation delay
B to A - 4.4 - 4.5 - 4.7 ns
tPLH LOW to HIGH
propagation delay
B to A - 5.3 - 4.5 - 0.5 ns
ten enable time OEto A; B - 200 - 200 - 200 ns
tdis disable time OEto A; no external load [2] -25 - 25 - 25 nsto B; no external load [2] -25 - 25 - 25 nstoA - 230 - 230 - 230 nstoB - 200 - 200 - 200 ns
tTLH LOW to HIGH
output transition
time
A port 3.2 9.5 2.3 9.3 1.8 7.6 ns
B port 3.3 10.8 2.7 9.1 2.7 7.6 ns
tTHL HIGH to LOW
output transition
time
A port 2.0 5.9 1.9 6.0 1.7 13.3 ns
B port 2.9 7.6 2.8 7.5 2.8 10.0 ns pulse width data inputs 20 - 20 - 20 - ns
fdata data rate - 50 - 50 - 50 Mbps
VCC(A) = 2.5 V 0.2 VtPHL HIGH to LOW
propagation delay
A to B - 3.2 - 3.3 - 3.4 ns
tPLH LOW to HIGH
propagation delay
A to B - 3.5 - 4.1 - 4.4 ns
tPHL HIGH to LOW
propagation delay
B to A - 3.0 - 3.6 - 4.3 ns
tPLH LOW to HIGH
propagation delay
B to A - 2.5 - 1.6 - 0.7 ns
ten enable time OEto A; B - 200 - 200 - 200 ns
tdis disable time OEto A; no external load [2] -20 - 20 - 20 nsto B; no external load [2] -20 - 20 - 20 nstoA - 200 - 200 - 200 nstoB - 200 - 200 - 200 ns
tTLH LOW to HIGH
output transition
time
A port 2.8 7.4 2.6 6.6 1.8 6.2 ns
B port 3.2 8.3 2.9 7.9 2.4 6.8 ns
NXP Semiconductors NTS0101
Dual supply translating transceiver; open drain; auto direction sensing[1] ten is the same as tPZL and tPZH.
tdis is the same as tPLZ and tPHZ.
[2] Delay between OE going LOW and when the outputs are actually disabled.
tTHL HIGH to LOW
output transition
time
A port 1.9 5.7 1.9 5.5 1.8 5.3 ns
B port 2.2 7.8 2.4 6.7 2.6 6.6 ns pulse width data inputs 20 - 20 - 20 - ns
fdata data rate - 50 - 50 - 50 Mbps
VCC(A) = 3.3 V 0.3 VtPHL HIGH to LOW
propagation delay
A to B - - - 2.4 - 3.1 ns
tPLH LOW to HIGH
propagation delay
A to B - - - 4.2 - 4.4 ns
tPHL HIGH to LOW
propagation delay
B to A - - - 2.5 - 3.3 ns
tPLH LOW to HIGH
propagation delay
B to A - - - 2.5 - 2.6 ns
ten enable time OEto A; B - - - 200 - 200 ns
tdis disable time OEto A; no external load [2] -- - 15 - 15 nsto B; no external load [2] -- - 15 - 15 nstoA - - - 260 - 260 nstoB - - - 200 - 200 ns
tTLH LOW to HIGH
output transition
time
A port - - 2.3 5.6 1.9 5.9 ns
B port - - 2.5 6.4 2.1 7.4 ns
tTHL HIGH to LOW
output transition
time
A port - - 2.0 5.4 1.9 5.0 ns
B port - - 2.3 7.4 2.4 7.6 ns pulse width data inputs - - 20 - 20 - ns
fdata data rate - - - 50 - 50 Mbps
Table 10. Dynamic characteristics for temperature range 40 C to +85 C[1]Voltages are referenced to GND (ground=0 V); for test circuit see Figure 7; for wave forms see Figure 5 and Figure6.
NXP Semiconductors NTS0101
Dual supply translating transceiver; open drain; auto direction sensingTable 11. Dynamic characteristics for temperature range 40 C to +125 C[1]Voltages are referenced to GND (ground=0 V); for test circuit see Figure 7; for wave forms see Figure 5 and Figure6.
VCC(A) = 1.8 V 0.15 VtPHL HIGH to LOW
propagation delay
A to B - 5.8 - 5.9 - 7.3 ns
tPLH LOW to HIGH
propagation delay
A to B - 8.5 - 8.5 - 8.8 ns
tPHL HIGH to LOW
propagation delay
B to A - 5.5 - 5.7 - 5.9 ns
tPLH LOW to HIGH
propagation delay
B to A - 6.7 - 5.7 - 0.7 ns
ten enable time OEto A; B - 200 - 200 - 200 ns
tdis disable time OEto A; no external load [2] -30 - 30 - 30 nsto B; no external load [2] -30 - 30 - 30 nstoA - 250 - 250 - 250 nstoB - 220 - 220 - 220 ns
tTLH LOW to HIGH
output transition
time
A port 3.2 11.9 2.3 11.7 1.8 9.5 ns
B port 3.3 13.5 2.7 11.4 2.7 9.5 ns
tTHL HIGH to LOW
output transition
time
A port 2.0 7.4 1.9 7.5 1.7 16.7 ns
B port 2.9 9.5 2.8 9.4 2.8 12.5 ns pulse width data inputs 20 - 20 - 20 - ns
fdata data rate - 50 - 50 - 50 Mbps
VCC(A) = 2.5 V 0.2 VtPHL HIGH to LOW
propagation delay
A to B - 4.0 - 4.2 - 4.3 ns
tPLH LOW to HIGH
propagation delay
A to B - 4.4 - 5.2 - 5.5 ns
tPHL HIGH to LOW
propagation delay
B to A - 3.8 - 4.5 - 5.4 ns
tPLH LOW to HIGH
propagation delay
B to A - 3.2 - 2.0 - 0.9 ns
ten enable time OEto A; B - 200 - 200 - 200 ns
tdis disable time OEto A; no external load [2] -25 - 25 - 25 nsto B; no external load [2] -25 - 25 - 25 nstoA - 220 - 220 - 220 nstoB - 220 - 220 - 220 ns
tTLH LOW to HIGH
output transition
time
A port 2.8 9.3 2.6 8.3 1.8 7.8 ns
B port 3.2 10.4 2.9 9.7 2.4 8.3 ns
tTHL HIGH to LOW
output transition
time
A port 1.9 7.2 1.9 6.9 1.8 6.7 ns
B port 2.2 9.8 2.4 8.4 2.6 8.3 ns
NXP Semiconductors NTS0101
Dual supply translating transceiver; open drain; auto direction sensing[1] ten is the same as tPZL and tPZH.
tdis is the same as tPLZ and tPHZ.
[2] Delay between OE going LOW and when the outputs are actually disabled. pulse width data inputs 20 - 20 - 20 - ns
fdata data rate - 50 - 50 - 50 Mbps
VCC(A) = 3.3 V 0.3 VtPHL HIGH to LOW
propagation delay
A to B - - - 3.0 - 3.9 ns
tPLH LOW to HIGH
propagation delay
A to B - - - 5.3 - 5.5 ns
tPHL HIGH to LOW
propagation delay
B to A - - - 3.2 - 4.2 ns
tPLH LOW to HIGH
propagation delay
B to A - - - 3.2 - 3.3 ns
ten enable time OEto A; B - - - 200 - 200 ns
tdis disable time OEto A; no external load [2] - - - 20 - 20 nsto B; no external load [2] - - - 20 - 20 nstoA - - - 280 - 280 nstoB - - - 220 - 220 ns
tTLH LOW to HIGH
output transition
time
A port - - 2.3 7.0 1.9 7.4 ns
B port - - 2.5 8.0 2.1 9.3 ns
tTHL HIGH to LOW
output transition
time
A port - - 2.0 6.8 1.9 6.3 ns
B port - - 2.3 9.3 2.4 9.5 ns pulse width data inputs - - 20 - 20 - ns
fdata data rate - - - 50 - 50 Mbps
Table 11. Dynamic characteristics for temperature range 40 C to +125 C[1]Voltages are referenced to GND (ground=0 V); for test circuit see Figure 7; for wave forms see Figure 5 and Figure6.
NXP Semiconductors NTS0101
Dual supply translating transceiver; open drain; auto direction sensing
13. Waveforms[1] VCCI is the supply voltage associated with the input.
[2] VCCO is the supply voltage associated with the output.
Table 12. Measurement points [1][2]1.8 V 0.15 V 0.5VCCI 0.5VCCO VOL + 0.15 V VOH 0.15 V
2.5 V 0.2 V 0.5VCCI 0.5VCCO VOL + 0.15 V VOH 0.15 V
3.3 V 0.3 V 0.5VCCI 0.5VCCO VOL + 0.3 V VOH 0.3 V
5.0 V 0.5 V 0.5VCCI 0.5VCCO VOL + 0.3 V VOH 0.3 V
NXP Semiconductors NTS0101
Dual supply translating transceiver; open drain; auto direction sensing[1] VCCI is the supply voltage associated with the input.
[2] For measuring data rate, pulse width, propagation delay and output rise and fall measurements, RL = 1 M; for measuring enable and
disable times, RL = 50 K.
[3] VCCO is the supply voltage associated with the output.
Table 13. Test data1.65 V to 3.6 V 2.3 V to 5.5 V VCCI 1.0ns/V 15pF 50k, 1 M open open 2VCCO
