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NTR1P02LT3GONN/a10000avaiPower MOSFET


NTR1P02LT3G ,Power MOSFETELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
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NTR1P02LT3G
Power MOSFET
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V −20 V(BR)DSS(V = 0 V, I = −10 A)GS DZero Gate Voltage Drain Current I ADSS(V = −16 V, V = 0 V) −1.0DS GS(V = −16 V, V = 0 V, T = 125°C) −10DS GS JGate−Body Leakage Current (V = ± 12 V, V = 0 V) I ±100 nAGS DS GSSON CHARACTERISTICS (Note 1)Gate Threshold Voltage V −0.7 −1.0 −1.25 VGS(th)(V = V , I = −250 A)DS GS DStatic Drain−to−Source On−Resistance r DS(on)(V = −4.5 V, I = −0.75 A) 0.135 0.22GS D(V = −2.5 V, I = −0.5 A) 0.190 0.35GS DDYNAMIC CHARACTERISTICSInput Capacitance (V = −5.0 V) C 225 pFDS issOutput Capacitance (V = −5.0 V) C 130DS ossTransfer Capacitance (V = −5.0 V) C 55DG rssSWITCHING CHARACTERISTICS (Note 2)Turn−On Delay Time t 7.0 nsd(on)Rise Time t 15r(V (V = −5.0 = −5.0 V, V, II = −1.0 A, = −1.0 A,DD DD D DR = 5.0 , R = 6.0 )L GTurn−Off Delay Time t 18d(off)Fall Time t 20fTotal Gate Charge (V = −16 V, I = −1.5 A, Q 5500 pCDS D TV = −4.0 V)GSSOURCE−DRAIN DIODE CHARACTERISTICSContinuous Current I −0.6 ASPulsed Current I −0.75SMForward Voltage (Note 2) (V = 0 V, I = −0.6 A) V −1.0 VGS S SDReverse Recovery Time t 16 nsrr(I = −1.0 A, V = 0 V,S GSt 11adI dI /dt = 100 A/ /dt = 100 A/s) s)S St 5.5bReverse Recovery Stored Charge Q 0.0085 CRR1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.2. Switching characteristics are independent of operating junction temperature.
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