NTP5863N ,Power MOSFETELECTRICAL CHARACTERISTICS (T = 25°C Unless otherwise specified) JCharacteristics Symbol Test Condi ..
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NTP5864NG , Power MOSFET 60 V, 63 A, 12.4 mOhm
NTP6410AN , N-Channel Power MOSFET 100 V, 76 A, 13 mΩ
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OZ962R , High-Efficiency Inverter Controller
OZ964G , Change Summary
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OZ965IR , High-Efficiency Inverter Controller
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NTP5863N
Power MOSFET
ELECTRICAL CHARACTERISTICS (T = 25°C Unless otherwise specified) JCharacteristics Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrainï toï Source Breakdown Voltage V V = 0 V, I = 250 A 60 V(BR)DSS DS DDrainï toï Source Breakdown Voltage V /T 47 mV/°C(BR)DSS JI = 250 A, ref to 25°CDTemperature CoefficientZero Gate Voltage Drain Current I T = 25°C 1.0 ADSS JV = 0 VGSV = 60 VDST = 125°C 50JGateï Body Leakage Current I V = 0 V, V = 20 V 100 nAGSS DS GSON CHARACTERISTICS (Note 2)Gate Threshold Voltage V V = V , I = 250 A 2.0 4.0 VGS(th) GS DS DNegative Threshold Temperature Coefficient V /T 9.1 mV/°CGS(th) JDrainï toï Source Onï Resistance R V = 10 V, I = 20 A 6.5 7.8 mDS(on) GS DForward Transconductance g V = 15 V, I = 30 A 12 SFS DS DCHARGES, CAPACITANCES & GATE RESISTANCEInput Capacitance C 3200 pFissV = 25 V, V = 0 V,DS GSOutput Capacitance C 350ossf = 1 MHzTransfer Capacitance C 230rssTotal Gate Charge Q 55 nCG(TOT)Threshold Gate Charge Q 3.4G(TH)V = 10 V, V = 48 V,GS DSI = 48 ADGateï toï Source Charge Q 14.5GSGateï toï Drain Charge Q 19GDGate Resistance R 0.4 GSWITCHING CHARACTERISTICS, V = 10 V (Note 3)GSTurnï On Delay Time t 10 nsd(on)Rise Time t 34rV = 10 V, V = 48 V,GS DDI = 48 A, R = 2.5D GTurnï Off Delay Time t 25d(off)Fall Time t 9.0fDRAINï SOURCE DIODE CHARACTERISTICSForward Diode Voltage V VT = 25°C 0.96 1.5SD J dcV = 0 VGSI = 48 AST = 150°C 0.85JReverse Recovery Time t 32 nsrrCharge Time t 20aV = 0 V , I = 48 A ,GS dc S dcdI /dt = 100 A/sSDischarge Time t 12bReverse Recovery Stored Charge Q 28 nCRR2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.3. Switching characteristics are independent of operating junction temperatures.
