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NTMS7N03R2ONN/a5000avaiPower MOSFET 7 Amps, 30 Volts


NTMS7N03R2 ,Power MOSFET 7 Amps, 30 VoltsMAXIMUM RATINGS (T = 25°C unless otherwise noted)CSRating Symbol Value UnitDrain-to-Source Voltage ..
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NTMS7N03R2
Power MOSFET 7 Amps, 30 Volts
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max UnitOFF CHARACTERISTICSDrain-to-Source Breakdown Voltage (Notes 5 and 7) V Vdc(BR)DSS(V = 0 Vdc, I = 0.25 mAdc) 30 - -GS DTemperature Coefficient (Positive) - 41 - mV/°CZero Gate Voltage Drain Current I μAdcDSS(V = 30 Vdc, V = 0 Vdc) - 0.02 1.0DS GS(V = 30 Vdc, V = 0 Vdc, T = 125°C) - - 10DS GS JGate-Body Leakage Current (V = ± 20 Vdc, V = 0) I - - 100 nAdcGS DS GSSON CHARACTERISTICSGate Threshold Voltage (Note 5) V VdcGS(th)(V = V , I = 0.25 mAdc) 1.0 1.6 3.0DS GS DThreshold Temperature Coefficient (Negative) - 4.0 - mV/°CStatic Drain-to-Source On-Resistance (Notes 5 and 7) R mDS(on)(V = 10 Vdc, I = 7.0 Adc) - 18.6 23GS D(V = 4.5 Vdc, I = 3.5 Adc) - 23.5 28GS DDrain-to-Source On-Voltage (V = 10 Vdc, I = 5.0 Adc) (Notes 5 and 7) V - 93 115 mVGS D DS(on)Forward Transconductance (V = 15 Vdc, I = 2.0 Adc) (Note 5) g 3.0 13 - MhosDS D FSDYNAMIC CHARACTERISTICSInput Capacitance C - 1064 1190 pFiss(V (V = 25 Vdc, V 25 Vd V = 0 Vdc, 0VdDS GSOutput Capacitance C - 300 490ossf f = 1.0 MHz = 1.0 MHz) )Transfer Capacitance C - 94 120rssSWITCHING CHARACTERISTICS (Note 6)Turn-On Delay Time t - 15 30 nsd(on)(V = 10 Vdc, I = 5.0 Adc,Rise Time DD D t - 71 185rV V = 4.5 Vdc, =45VdcGS GSTurn-Of f Delay Time t - 27 70d(off)R R = 9.1 9.1 Ω Ω) (Note 5) ) (Note 5)G GFall Time t - 38 80fTurn-On Delay Time t - 8.0 -d(on)(V = 10 Vdc, I = 5.0 Adc,DD DRise Time t - 38 -rV V = 10 Vdc, =10VdcGS GSTurn-Of f Delay Time t - 33 -d(off)R R = 9.1 9.1 Ω Ω) (Note 5) ) (Note 5)G GFall Time t - 49fGate Charge Q - 26 43 nCTQ - 3.1 -1(V (V = 16 Vdc, I 16 Vdc, I = 5.0 Adc, 5.0 Adc,DS DS D DV = 10 Vdc) (Note 5)GSQ - 6.0 -2Q - 5.5 -3SOURCE-DRAIN DIODE CHARACTERISTICSForward On-Voltage (Note 5) (I = 7.0 Adc, V = 0 Vdc) (Note 5) V - 0.82 1.1 VdcS GS SD(I = 7.0 Adc, V = 0 Vdc,S GST = 125°C) - 0.67 -JReverse Recovery Time t - 27 - nsrrt - 15 -a(I (I = 7.0 Adc, V 7.0 Adc, V = 0 Vdc, 0 Vdc,S S GS GSdI /dt = 100 A/μs) (Note 5)St - 11.5 -bReverse Recovery Stored Charge Q - 0.02 - μCRR5. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.6. Switching characteristics are independent of operating junction temperature.7. Reflects Typical Values.Max limit Typ Cpk3
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