NTMS4176P ,Power MOSFET -30 V, -9.6 A, P-Channel, SOIC-8ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)jkJCharacteristic Symbol Test Condition ..
NTMS4176PR2G , Power MOSFET -30 V, -9.6 A, P-Channel, SOIC-8
NTMS4404NR2 ,Power MOSFET 30 V, 12 A, Single N-Channel SO-8ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Mi ..
NTMS4503N ,Power MOSFET 28 V, 14 A, N-Channel SO-8ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Condition M ..
NTMS4704NR2 , Power MOSFET 30 V, 12.3 A, Single N−Channel, SO−8
NTMS4704NR2 , Power MOSFET 30 V, 12.3 A, Single N−Channel, SO−8
OZ6812T , ACPI CardBus Controller
OZ6812T , ACPI CardBus Controller
OZ6812T , ACPI CardBus Controller
OZ6912T , Single-Slot ACPI CardBus Controller
OZ6912T , Single-Slot ACPI CardBus Controller
OZ962R , High-Efficiency Inverter Controller
NTMS4176P
Power MOSFET -30 V, -9.6 A, P-Channel, SOIC-8
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)jkJCharacteristic Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrain-to-Source Breakdown Voltage V V = 0 V, I = -250 A -30 V(BR)DSSGS DDrain-to-Source Breakdown Voltage Tem‐ V /T 29(BR)DSS JmV/°Cperature CoefficientT = 25°C -1.0Zero Gate Voltage Drain Current IDSS V = 0 V, JGSAV = -24 VDST = 85°C -5.0JGate-to-Source Leakage Current I V = 0 V, V = ±25 V ±100 nAGSS DS GSON CHARACTERISTICS (Note 5)Gate Threshold Voltage V V = V , I = -250 A -1.5 -2.5 VGS(TH) GS DS DNegative Threshold Temperature Coeffi‐ V /T 6.0GS(TH) JmV/°CcientDrain-to-Source On Resistance R V = -10 V I = -9.6 A 14 18DS(on) GS DmV = -4.5 V I = -7.5 A 23 30GS DForward Transconductance g V = -1.5 V, I = -9.6 A 21.5 SFS DS DCHARGES, CAPACITANCES AND GATE RESISTANCEInput Capacitance C 1720ISSV = 0 V, f = 1.0 MHz,GSOutput Capacitance C 370 pFOSSV = -24 VDSReverse Transfer Capacitance C 256RSSTotal Gate Charge Q 17G(TOT)Threshold Gate Charge Q 2.0G(TH)V = -4.5 V, V = -15 V,GS DSnCI = -9.6 ADGate-to-Source Charge Q 6.0GSGate-to-Drain Charge Q 8.4GDTotal Gate Charge Q V = -10 V, V = -15 V, 32.6G(TOT) GS DSnCI = -9.6 A,DGate Resistance R 3.0 4.5 GSWITCHING CHARACTERISTICS (Note 6)Turn-On Delay Time t 15d(ON)Rise Time t 9.0r V = -10 V, V = -15 V, GS DDnsI = -1.0 A, R = 6.0 D GTurn-Off Delay Time t 19.5d(OFF)Fall Time t 42.5fDRAIN-TO-SOURCE CHARACTERISTICSForward Diode Voltage V T = 25°C -0.75 -1.0 VSD V = 0 V JGSI = -2.1 ADT = 125°C 0.59JReverse Recovery Time t 32.4RRnsCharge Time T 14aV = 0 V, d /d = 100 A/s, GS IS tI = -2.1 ASDischarge Time T 18.4bReverse Recovery Time Q 23 nCRR5. Pulse Test: pulse width 300 s, duty cycle 2%.6. Switching characteristics are independent of operating junction temperatures.
