NTMFS4744N ,Power MOSFET 30 V, 53 A, Single N-Channel, SO-8 FLELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Mi ..
NTMFS4747N ,Power MOSFET 30 V, 44 A, N-Channel, SO-8 Flat LeadELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Mi ..
NTMFS4821NT1G , Power MOSFET 30 V, 58.5 A, Single N−Channel, SO−8 FL
NTMFS4833N ,Single n-channel, SO-8 FLELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Mi ..
NTMFS4834NT1G , Power MOSFET 30 V, 130 A, Single N−Channel, SO−8FL
NTMFS4835N ,Power MOSFET, 30 V, 104 A, Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Mi ..
OXUF934DSA-LQAG , FireWire 400, USB 2.0, eSATA to SATA Controller
OXUF934DSB-LQAG , FireWire 800/400, USB 2.0, eSATA to SATA Controller
OXUFS936QSE , Universal Interface to Quad SATA RAID Controller
OXUFS936QSE , Universal Interface to Quad SATA RAID Controller
OZ6812T , ACPI CardBus Controller
OZ6812T , ACPI CardBus Controller
NTMFS4744N
Power MOSFET 30 V, 53 A, Single N-Channel, SO-8 FL
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V V = 0 V, I = 250 A 30 V(BR)DSSGS DDrain−to−Source Breakdown Voltage V / 10(BR)DSSmV/°CTemperature Coefficient TJZero Gate Voltage Drain Current I V = 0 V, T = 25 °C 1.0DSS GS JV = 24 V ADST = 125°C 10JGate−to−Source Leakage Current I V = 0 V, V = 20 V 100 nAGSS DS GSON CHARACTERISTICS (Note 3)Gate Threshold Voltage V 1.5 2.5 VV = V , I = 250 AGS(TH) GS DS DNegative Threshold Temperature Coefficient V /T 5.0 mV/°CGS(TH) JDrain−to−Source On Resistance R V = 10 V to I = 30 A 7.6DS(on) GS D11.5 VI = 15 A 7.3DI = 10 A 7.3 10DmV = 4.5 V I = 30 A 10.4GS DI = 15 A 10.1DI = 10 A 9.9 14DForward Transconductance g V = 15 V, I = 15 A 25 SFS DS DCHARGES, CAPACITANCES & GATE RESISTANCEInput Capacitance C 1300ISSOutput Capacitance C 550V = 0 V, f = 1 MHz, V = 12 V pFOSSGS DSReverse Transfer Capacitance C 132RSSTotal Gate Charge Q 10 17G(TOT)Threshold Gate Charge Q 0.9G(TH)V = 4.5 V, V = 15 V; I = 30 A nCGS DS DGate−to−Source Charge Q 1.8GSGate−to−Drain Charge Q 5.9GDTotal Gate Charge Q V = 11.5 V, V = 15 V; 25 37G(TOT) GS DSnCI = 30 ADSWITCHING CHARACTERISTICS (Note 4)Turn−On Delay Time t 12d(ON)Rise Time t 203rV = 4.5 V, V = 15 V, I = 30 A,GS DS DnsR = 3.0 GTurn−Off Delay Time t 14d(OFF)Fall Time t 83f3. Pulse Test: pulse width 300 s, duty cycle 2%.4. Switching characteristics are independent of operating junction temperatures.
