NTMD6N02 ,Power MOSFET 6.0 Amps, 20 VoltsMAXIMUM RATINGS (T = 25°C unless otherwise noted)J SRating Symbol Value UnitDrain−to−Source Voltage ..
NTMD6N02R2 ,Power MOSFET 6.0 Amps, 20 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Note 5)CCharacteristic Symbol Min Typ ..
NTMD6N02R2G , Power MOSFET 6.0 Amps, 20 Volts
NTMD6N03 ,30V HD3e SO8 Dual3R , DRAIN−TO−SOURCE RESISTANCE R , DRAIN−TO−SOURCE RESISTANCE (Ω)I , DRAIN CURRENT (AMPS)DS(on) DS ..
NTMD6N03R2 ,Power MOSFET3R , DRAIN−TO−SOURCE RESISTANCE R , DRAIN−TO−SOURCE RESISTANCE (Ω)I , DRAIN CURRENT (AMPS)DS(on) DS ..
NTMD6P02 ,Power MOSFET 6 Amps, 20 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) *CCharacteristic Symbol Min Typ Max Un ..
OXMPCI952-VBAG , Integrated High Performance Dual UARTs, 8-bit Local Bus/Parallel Port. 3.3v PCI/miniPCI interface.
OXmPCI952-VBAG , Integrated High Performance Dual UARTs, 8-bit Local Bus/Parallel Port. 3.3v PCI/miniPCI interface.
OXPCIE200-TAAG , PCI Express multi-port bridge
OXPCIE200-TAAG , PCI Express multi-port bridge
OXUF922 , USB2.0 to Quad Serial Port Bridge
OXUF934DSA-LQAG , FireWire 400, USB 2.0, eSATA to SATA Controller
NTMD6N02-NTMD6N02R2
Power MOSFET 6.0 Amps, 20 Volts
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Note 5)CCharacteristic Symbol Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V Vdc(BR)DSS(V = 0 Vdc, I = 250 Adc) 20 − −GS DTemperature Coefficient (Positive) − 19.2 − mV/°CZero Gate Voltage Drain Current I AdcDSS(V = 20 Vdc, V = 0 Vdc, T = 25°C) − − 1.0DS GS J(V = 20 Vdc, V = 0 Vdc, T = 125°C) − − 10DS GS JGate−Body Leakage Current (V = +12 Vdc, V = 0 Vdc) I − − 100 nAdcGS DS GSSGate−Body Leakage Current (V = −12 Vdc, V = 0 Vdc) I − − −100 nAdcGS DS GSSON CHARACTERISTICSGate Threshold Voltage V VdcGS(th)(V = V , I = −250 Adc) 0.6 0.9 1.2DS GS DTemperature Coefficient (Negative) − −3.0 − mV/°CStatic Drain−to−Source On−State Resistance R ΩDS(on)(V = 4.5 Vdc, I = 6.0 Adc) − 0.028 0.035GS D(V = 4.5 Vdc, I = 4.0 Adc) − 0.028 0.043GS D(V = 2.7 Vdc, I = 2.0 Adc) − 0.033 0.048GS D(V = 2.5 Vdc, I = 3.0 Adc) − 0.035 0.049GS DForward Transconductance (V = 12 Vdc, I = 3.0 Adc) g − 10 − MhosDS D FSDYNAMIC CHARACTERISTICSInput Capacitance C − 785 1100 pFiss(V (V = 16 Vdc, V 16 Vd V = 0 Vdc, 0VdDS GSOutput CapacitanceC − 260 450ossf f = 1.0 MHz = 1.0 MHz) )Reverse Transfer CapacitanceC − 75 180rssSWITCHING CHARACTERISTICS (Notes 6 and 7)Turn−On Delay Time t − 12 20 nsd(on)(V = 16 Vdc, I = 6.0 Adc,DD DRise Time t − 50 90rV V = 4.5 Vdc, =45VdcGS GSTurn−Off Delay Time t − 45 75d(off)R R = 6.0 6.0 Ω Ω) )G GFall Time t − 80 130fTurn−On Delay Time t − 11 18 nsd(on)(V = 16 Vdc, I = 4.0 Adc,Rise Time DD D t − 35 65rV V = 4.5 Vdc, =45VdcGS GSTurn−Off Delay Time t − 45 75d(off)R R = 6.0 6.0 Ω Ω) )G GFall Time t − 60 110fTotal Gate Charge Q − 12 20 nCtot(V (V = = 16 16 Vdc, Vdc,DS DSGate−Source Charge V = 4.5 Vdc, Q − 1.5 −gsGS GSII = 6.0 Adc) 60Ad )DGate−Drain Charge Q − 4.0 −gd5. Handling precautions to protect against electrostatic discharge is mandatory6. Indicates Pulse Test: Pulse Width = 300 s max, Duty Cycle = 2%.7. Switching characteristics are independent of operating junction temperature.
