NTHS5443T1 ,Power MOSFET 20V, 3.6A, P-Channel ChipFET™ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Condition M ..
NTHS5443T1 ,Power MOSFET 20V, 3.6A, P-Channel ChipFET™Maximum ratings are 95C/W for the 1206–8In this example, a 45C/W reduction was achieved withoutve ..
NTHS5443T1G ,Power MOSFET 20V, 3.6A, P-Channel ChipFET™APPLICATION NOTEINTRODUCTION 0.0054 sq. in. or 3.51 sq. mm. This will assist the powerNew ON Semico ..
NTHS5443T1G ,Power MOSFET 20V, 3.6A, P-Channel ChipFET™2REV. AAND8044/D160Single EVB120Min. Footprint80401” Square PCB0–5 –4 –3 –2 –110 10 10 10 10 1 10 1 ..
NTHS5445T1 ,OBSOLETEELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Condition M ..
NTJD2152P ,Trench Small Signal MOSFET 8 V Dual P-Channel, ESD Protection2NTJD2152PTYPICAL PERFORMANCE CURVES (T = 25°C unless otherwise noted)J1.41.4V = −4.5 V to −2.6 VGS ..
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NTHS5443T1
Power MOSFET 20V, 3.6A, P-Channel ChipFET™
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Condition Min Typ Max UnitStaticGate Threshold Voltage V V = V , I = −250 A −0.6 VGS(th) DS GS DGate−Body Leakage I V = 0 V, V = 12 V 100 nAGSS DS GSZero Gate Voltage Drain Current I AV = −16 V, V = 0 V −1.0DSS DS GSV = −16 V, V = 0 V, −5.0DS GST = 85°CJOn−State Drain Current (Note 3) I V −5.0 V, V = −4.5 V −15 AD(on) DS GSDrain−Source On−State Resistance r V = −4.5 V, I = −3.6 A 0.056 0.065 DS(on) GS D(Note 3) V = −3.6 V, I = −3.3 A 0.065 0.074GS DV = −2.5 V, I = −2.7 A 0.095 0.110GS DForward Transconductance (Note 3) g V = −10 V, I = −3.6 A 10 Sfs DS DDiode Forward Voltage (Note 3) V I = −1.1 A, V = 0 V −0.8 −1.2 VSD S GSDynamic (Note 4)Total Gate Charge Q 7.5 12 nCGV = −10 V, V = −4.5 V, DS GSGate−Source Charge Q 0.9 2.8GSII = −3.6 A = −3.6 ADDGate−Drain Charge Q 2.2 −GDsTurn−On Delay Time t 8.5 13d(on)V = −10 V, R = 10 Rise Time t 14 21DD LrII −1.0 A, V 10A V = −4.5 V = 45V,D D GE GEN NTurn−Off Delay Time t 38 57d(off) R = 6 G GFall Time t 30 45fSource−Drain Reverse Recovery Time t I = −1.1 A, di/dt = 100 A/s 30 60 nsrr F2. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq [1 oz] including traces).3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.4. Guaranteed by design, not subject to production testing.
