NTHD4N02FT1G ,Power MOSFET and Schottky Diode 20 V, 2.7A, N-Channel, w/1.0 A Schottky Barrier Diode, ChipFET™ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Conditions Min T ..
NTHD4P02FT1 ,Power MOSFET and Schottky Diode 20 V, 2.1A, Single P-Channel w/ 1.0 A Schottky Barrier Diode, ChipFET2NTHD4P02FTYPICAL MOSFET PERFORMANCE CURVES (T = 25°C unless otherwise noted)J44V = −6 V to −3 V T ..
NTHD4P02FT1G ,Power MOSFET and Schottky Diode 20 V, 2.1A, Single P-Channel w/ 1.0 A Schottky Barrier Diode, ChipFETELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Conditions Min T ..
NTHD5902T1 ,OBSOLETEELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Condition M ..
NTHD5903T1 ,Power MOSFET Dual P-Channel ChipFET™ 2.1 A, 20 Vfeatures the same outline as popular 1206A Figure 2, on the following page. This is sufficient for ..
NTHD5903T1G ,Power MOSFET Dual P-Channel ChipFET™ 2.1 A, 20 V2REV. AAND8061/D200Junction–to–Ambient Thermal Resistance(dependent on the pcb size)Min. FootprintT ..
OV6680 , optimal low-light sensitivity and pixel performance for video conferencing cameras in 3G mobile phones
OV6680 , optimal low-light sensitivity and pixel performance for video conferencing cameras in 3G mobile phones
OV7411 , SINGLE-CHIP CMOS COLOR PAL CAMERA
OV-7604-C7 , Low Power Clock Oscillator 32.768 kHz
OV7670 , 1/6 inch VGA CameraChip for ultra-thin camera modules
OV7670 , 1/6 inch VGA CameraChip for ultra-thin camera modules
NTHD4N02FT1-NTHD4N02FT1G
Power MOSFET and Schottky Diode 20 V, 2.7A, N-Channel, w/1.0 A Schottky Barrier Diode, ChipFET™
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Conditions Min Typ Max UnitsOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V V = 0 V, I = 250 A 20 28 V(BR)DSS GS DZero Gate Voltage Drain Current I V = 0 V T = 25°C 1.0 ADSS GS JV = 16 VDST = 85°C 5.0JGate−to−Source Leakage Current I V = 0 V, V = 12 V 100 nAGSS DS GSON CHARACTERISTICS (Note 2)Gate Threshold Voltage V V = V , I = 250 A 0.6 1.2 VGS(TH) GS DS DDrain−to−Source On−Resistance R V = 4.5, I = 2.9 A 0.058 0.080DS(on) ()GS DV = 2.5, I = 2.3 A 0.077 0.115GS DForward Transconductance g V = 10 V, I = 2.9 A 6.0 SFS DS DCHARGES AND CAPACITANCESInput Capacitance C 180 300 pFISSV V = 0 V 0V, f = 1.0 MHz, f 10MHGSOutput Capacitance C 80 130OSSV V = 10 V = 10 VDS DSReverse Transfer Capacitance C 30 50RSSTotal Gate Charge Q 2.6 4.0 nCG(TOT)V V = 4.5 V 45V, V V = 10 V 10 V, GS DSGate−to−Source Charge Q 0.6GSII = = 2.9 A 2.9 AD DGate−to−Drain Charge Q 0.7GDSWITCHING CHARACTERISTICS (Note 3)Turn−On Delay Time t 5.0 10 nsd(ON)Rise Time t 9.0 18rV V = 4.5 V = 4.5 V, , V V = 16 V = 16 V, , GS GS DD DDI = 2.9 A, R = 2.5 D GTurn−Off Delay Time t 10 20d(OFF)Fall Time t 3.0 6.0fDRAIN−SOURCE DIODE CHARACTERISTICS (Note 2)Forward Diode Voltage V V = 0 V, I = 2.6 A 0.8 1.15 VSD GS SReverse Recovery Time t 12.5 nsRRCharge Time ta 9.0V V = = 0 V 0 V, , II = 2.6 A, = 2.6 A, GS GS S SdI /dt = 100 A/sSDischarge Time tb 3.5Reverse Recovery Charge Q 6.0 nCRRSCHOTTKY DIODE
