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NTHD4508NT1ONN/a12000avaiPower MOSFET 20 V, 3.1 A, Dual N-Channel, ChipFET™
NTHD4508NT1GONN/a3000avaiPower MOSFET 20 V, 3.1 A, Dual N-Channel, ChipFET™


NTHD4508NT1 ,Power MOSFET 20 V, 3.1 A, Dual N-Channel, ChipFET™ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Conditions Min T ..
NTHD4508NT1G ,Power MOSFET 20 V, 3.1 A, Dual N-Channel, ChipFET™2NTHD4508NTYPICAL PERFORMANCE CURVES (T = 25°C unless otherwise noted)J88V = 5 V to 3 VGST = 25°CJ ..
NTHD4N02FT1 ,Power MOSFET and Schottky Diode 20 V, 2.7A, N-Channel, w/1.0 A Schottky Barrier Diode, ChipFET™2NTHD4N02FTYPICAL MOSFET PERFORMANCE CURVES (T = 25°C unless otherwise noted)J88V = 5 V to 3 VGST = ..
NTHD4N02FT1G ,Power MOSFET and Schottky Diode 20 V, 2.7A, N-Channel, w/1.0 A Schottky Barrier Diode, ChipFET™ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Conditions Min T ..
NTHD4P02FT1 ,Power MOSFET and Schottky Diode 20 V, 2.1A, Single P-Channel w/ 1.0 A Schottky Barrier Diode, ChipFET2NTHD4P02FTYPICAL MOSFET PERFORMANCE CURVES (T = 25°C unless otherwise noted)J44V = −6 V to −3 V T ..
NTHD4P02FT1G ,Power MOSFET and Schottky Diode 20 V, 2.1A, Single P-Channel w/ 1.0 A Schottky Barrier Diode, ChipFETELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Conditions Min T ..
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NTHD4508NT1-NTHD4508NT1G
Power MOSFET 20 V, 3.1 A, Dual N-Channel, ChipFET™
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Conditions Min Typ Max UnitsOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V V = 0 V 20 V(BR)DSS GSZero Gate Voltage Drain Current I V = 0 V, V = 16 V 1.0 ADSS GS DSV = 0 V, V = 16 V, T = 125°C 10GS DS JGate−to−Source Leakage Current I V = 0 V, V = 12 V 100 nAGSS DS GSON CHARACTERISTICS (Note 2)Gate Threshold Voltage V V = V , I = 250 A 0.6 1.2 VGS(TH) GS DS DDrain−to−Source On−Resistance R mV = 4.5, I = 3.1 A 60 75DS(on) ()GS DV = 2.5, I = 2.3 A 80 115GS DForward Transconductance g V = 10 V, I = 3.1 A 6.0 SFS DS DCHARGES AND CAPACITANCESInput Capacitance C 180 pFISSV V = 0 V 0V, f = 1.0 MHz, f 10MHGSOutput Capacitance C 80OSSV V = 10 V = 10 VDS DSReverse Transfer Capacitance C 25RSSTotal Gate Charge Q 2.6 4.0 nCG(TOT)Threshold Gate Charge Q 0.5G(TH)V V = = 4.5 V 4.5 V, , V V = = 10 V 10 V, , GS GS DS DSI = 3.1 AGate−to−Source Charge Q D 0.6GSGate−to−Drain Charge Q 0.7GDSWITCHING CHARACTERISTICS (Note 3)Turn−On Delay Time t 5.0 10 nsd(ON)Rise Time t 15 30rV V = 4.5 V = 4.5 V, , V V = = 16 V 16 V, , GS GS D DS SI = 3.1 A, R = 2.5 Turn−Off Delay Time t D G 10 20d(OFF)Fall Time t 3.0 6.0fDRAIN−SOURCE DIODE CHARACTERISTICSForward Diode Voltage V V = 0 V, I = 3.1 A 0.75 1.15 VSD GS SReverse Recovery Time t 12.5 nsRRCharge Time ta 9.0V V = 0 V = 0 V, , II = 1.5 A, = 1.5 A, GS GS S SdI /dt = 100 A/sDischarge Time tb S 3.5Reverse Recovery Charge Q 6.0 nCRR2. Pulse Test: Pulse Width  300 s, Duty Cycle  2%.3. Switching characteristics are independent of operating junction temperatures.
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