NTHD4401PT3G ,Power MosFET 20 V Dual P-Channel 2.1 A ChipFET™3R DRAIN−TO−SOURCE RESISTANCE ()R DRAIN−TO−SOURCEDS(on), DS(on), −I DRAIN CURRENT (AMPS)D,RESISTAN ..
NTHD4502N ,Power MOSFET 30 V, 2.9 A, Dual N-Channel, ChipFET™ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Conditions Min T ..
NTHD4502NT1 ,Power MOSFET 30 V, 2.9 A, Dual N-Channel, ChipFET™Maximum ratings applied to the device are individual stress limit values (notORDERING INFORMATIONno ..
NTHD4508NT1 ,Power MOSFET 20 V, 3.1 A, Dual N-Channel, ChipFET™ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Conditions Min T ..
NTHD4508NT1G ,Power MOSFET 20 V, 3.1 A, Dual N-Channel, ChipFET™2NTHD4508NTYPICAL PERFORMANCE CURVES (T = 25°C unless otherwise noted)J88V = 5 V to 3 VGST = 25°CJ ..
NTHD4N02FT1 ,Power MOSFET and Schottky Diode 20 V, 2.7A, N-Channel, w/1.0 A Schottky Barrier Diode, ChipFET™2NTHD4N02FTYPICAL MOSFET PERFORMANCE CURVES (T = 25°C unless otherwise noted)J88V = 5 V to 3 VGST = ..
OV6680 , optimal low-light sensitivity and pixel performance for video conferencing cameras in 3G mobile phones
OV6680 , optimal low-light sensitivity and pixel performance for video conferencing cameras in 3G mobile phones
OV7411 , SINGLE-CHIP CMOS COLOR PAL CAMERA
OV-7604-C7 , Low Power Clock Oscillator 32.768 kHz
OV7670 , 1/6 inch VGA CameraChip for ultra-thin camera modules
OV7670 , 1/6 inch VGA CameraChip for ultra-thin camera modules
NTHD4401PT1-NTHD4401PT1G-NTHD4401PT3G
Power MosFET 20 V Dual P-Channel 2.1 A ChipFET™
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V V = 0 V, I = −250 A −20 −23 V(Br)DSS GS DDrain−to−Source Breakdown Voltage Tem- V /T −8.0 mV/°C(Br)DSS Jperature CoefficientZero Gate Voltage Drain Current I V = 0 V T = 25°C −1.0 ADSS GS JV = −16 V T = 85°C −5.0DS JGate−to−Source Leakage Current I V = 0 V, V = 12 V 100 nAGSS DS GSON CHARACTERISTICS (Note 2)Gate Threshold Voltage V V = V , I = −250 A −0.6 −0.75 −1.2 VGS(th) GS DS DGate Threshold Temperature Coefficient V /T 2.65 mV/°CGS(th) JDrain−to−Source On Resistance R V = −4.5 V, I = −2.1 A 0.130 0.155 DS(on) GS DV = −2.5 V, I = −1.7 A 0.200 0.240GS DV = −1.8 V, I = −1.0 A 0.34GS DForward Transconductance g V = −10 V, I = −2.1 A 5.0 SFS DS DCHARGES, CAPACITANCES AND GATE RESISTANCEInput Capacitance C 185 300issV = 0 V, f = 1.0 MHz,GSOutput Capacitance C 95 150pFossV V = −10 V = −10 VDS DSReverse Transfer Capacitance C 30 50rssTotal Gate Charge Q 3.0 6.0G(TOT)Threshold Gate Charge Q 0.2G(TH)V V = −4.5 V = −4.5 V, , V V = −10 V = −10 V,,GS GS DS DSnC nCI = −2.1 ADGate−to−Source Charge Q 0.5GSGate−to−Drain Charge Q 0.9GDSWITCHING CHARACTERISTICS (Note 3)Turn−On Delay Time t 7.0 12d(on)Rise Time t 13 25rV V = −4.5 V = −4.5 V, , V V = −16 V = −16 V,,GS GS DD DDns nsI = −2.1 A, R = 2.5 D GTurn−Off Delay Time t 33 50d(off)Fall Time t 27 40fDRAIN−SOURCE DIODE CHARACTERISTICSForward Diode V o a d ode o oltage age V VV V = 0 V 0 VSD SDGS GS−0.85 085 −1.15 115I = −2.5 ASReverse Recovery Time t 32rrCharge Time t 10a nsV V = 0 V = 0 V, , dI dI /dt /dt = 90 A/ = 90 A/s, s,GS GS S SI = −2.1 ASDischarge Time t 22bReverse Recovery Charge Q 15 nCRR2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.3. Switching characteristics are independent of operating junction temperatures.
