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NTGS4141NONN/a10000avaiPower MOSFET 30 V, 7.0 A, Single N-Channel, TSOP-6


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NTGS4141N
Power MOSFET 30 V, 7.0 A, Single N-Channel, TSOP-6
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrainï toï Source Breakdown Voltage V V = 0 V, I = 250 A 30 V(BR)DSS GS DDrainï toï Source Breakdown Voltage V /T 18.4 mV/°C(BR)DSS JTemperature CoefficientZero Gate Voltage Drain Current IT = 25°C 1.0 ADSS JV = 0 V, GSV = 24 VDST = 125°C 10JGateï toï Source Leakage Current I V = 0 V, V = ±20 V ±100 nAGSS DS GSON CHARACTERISTICS (Note 3)Gate Threshold Voltage V V = V , I = 250 A 1.0 3.0 VGS(TH) GS DS DNegative Threshold Temperature Coefficient V /T 5.7 mV/°CGS(TH) JDrainï toï Source On Resistance RV = 10 V, I = 7.0 A 21.5 25 mDS(on) GS DV = 4.5 V, I = 6.0 A 30 35GS DForward Transconductance g V = 10 V, I = 7.0 A 30 SFS DS DCHARGES, CAPACITANCES AND GATE RESISTANCEInput Capacitance C 560 pFISSV = 0 V, f = 1.0 MHz, GSOutput Capacitance C 115OSSV = 24 VDSReverse Transfer Capacitance C 75RSSTotal Gate Charge Q 12 nCG(TOT)Threshold Gate Charge Q 0.85G(TH)V = 10 V, V = 15 V, GS DSI = 7.0 ADGateï toï Source Charge Q 1.9GSGateï toï Drain Charge Q 3.0GDTotal Gate Charge Q 6.0 nCG(TOT)Threshold Gate Charge Q 0.8G(TH)V = 4.5 V, V = 15 V, GS DSI = 7.0 ADGateï toï Source Charge Q 1.85GSGateï toï Drain Charge Q 3.0GDGate Resistance R 2.8 GSWITCHING CHARACTERISTICS (Note 4)Turnï On Delay Time t 6.0 nsd(ON)Rise Time t 15rV = 10 V, V = 24 V, GS DSI = 7.0 A, R = 3.0 D GTurnï Off Delay Time t 18d(OFF)Fall Time t 4.0fDRAINï SOURCE DIODE CHARACTERISTICSForward Diode Voltage V T = 25°C 0.78 1.0 VSD JV = 0 V, GSI = 2.0 AST = 125°C 0.63JReverse Recovery Time t 15 nsRRCharge Time t 9.0aV = 0 VGSdI /dt = 100 A/s, I = 2.0 AS SDischarge Time t 6.0bReverse Recovery Charge Q 8.0 nCRR3. Pulse Test: pulse width  300 s, duty cycle  2%.4. Switching characteristics are independent of operating junction temperatures.
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