NTGD4161P ,Power MOSFET -30 V, -2.3 A, Dual P-Channel, TSOP-6ELECTRICAL CHARACTERISTICS (T =25°C unless otherwise stated)JParameter Symbol Test Condition Min Ty ..
NTGD4161PT1G , Power MOSFET -30 V, -2.3 A, Dual P-Channel, TSOP-6
NTGD4167C ,Complementary, 30V, +2.9/-2.2 A, TSOP-6 DualELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol N/P Test Conditions M ..
NTGS3130N ,Power MOSFET 20 V, 5.6 A, Single N-Channel, TSOP-6ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Test Condition M ..
NTGS3130NT1G , Power MOSFET 20 V, 5.6 A Single N-Channel, TSOP-6
NTGS3136P ,-20V, -5.8A, Single P-Channel, TSOP-6ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Mi ..
OUDH-SS-112D , 10 Amp Miniature, Sealed PC Board Relay
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OV6680 , optimal low-light sensitivity and pixel performance for video conferencing cameras in 3G mobile phones
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NTGD4161P
Power MOSFET -30 V, -2.3 A, Dual P-Channel, TSOP-6
ELECTRICAL CHARACTERISTICS (T =25°C unless otherwise stated)JParameter Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V V = 0 V, I = −250 A −30 V(BR)DSS GS DDrain−to−Source Breakdown Voltage V /T 22 mV/°C(BR)DSS JTemperature CoefficientZero Gate Voltage Drain Current I T = 25°C −1.0 ADSS JV = 0 V, GSV = −24 VDST = 125°C −10JGate−to−Source Leakage Current I V = 0 V, V = ±20 V ±100 nAGSS DS GSON CHARACTERISTICS (Note 3)Gate Threshold Voltage V V = V , I = −250 A −1.0 −1.9 −3.0 VGS(TH) GS DS DGate Threshold Temperature V /T −4.7 mV/°CGS(TH) JCoefficientDrain−to−Source On Resistance R V = −10 V, I = −2.1 A 105 160DS(on) mΩGS DV = −4.5 V, I = −1.6 A 190 280GS DForward Transconductance g V = −5.0 V, I = −2.1 A 2.7 SFS DS DCHARGES AND CAPACITANCESInput Capacitance C 281 pFISSV = −15 V, f = 1.0 MHz, DSOutput Capacitance C 50OSSV = 0 VGSReverse Transfer Capacitance C 28RSSTotal Gate Charge Q 5.6 7.1 nCG(TOT)Threshold Gate Charge Q 0.65G(TH)V = −10 V, V = −5.0 V, GS DSI = −2.1ADGate−to−Source Charge Q 1.2GSGate−to−Drain Charge Q 0.90GDSWITCHING CHARACTERISTICS (Note 4)Turn−On Delay Time t 7.6 14 nsd(on)Rise Time t 9.2 23rV = −4.5 V, V = −15 V, GS DDI = −1.0 A, R = 6.0 ΩD GTurn−Off Delay Time t 12.5 20d(off)Fall Time t 4.5 12fDRAIN−SOURCE DIODE CHARACTERISTICSForward Diode Voltage V T = 25°C −0.79 −1.2 VSDJV = 0 V, GSI = −0.8 AST = 125°C −0.65JReverse Recovery Time t 8.0RRCharge Time t 5.7nsaV = 0 V, dI /dt = 100 A/s, GS SI = −0.8 ASDischarge Time t 2.3bReverse Recovery Charge Q 3 nCRR3. Pulse Test: pulse width ≤ 300 s, duty cycle ≤ 2%.4. Switching characteristics are independent of operating junction temperatures.
