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Home ›  NN21 > NTD80N02-001-NTD80N02-1G-NTD80N02G-NTD80N02T4-NTD80N02T4G,Power MOSFET 80 Amps, 24 Volts N-Channel DPAK
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NTD80N02-001 |NTD80N02001ONN/a304avaiPower MOSFET 80 Amps, 24 Volts N-Channel DPAK
NTD80N02-1G |NTD80N021GONN/a30avaiPower MOSFET 80 Amps, 24 Volts N-Channel DPAK
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NTD80N02T4GONN/a1881avaiPower MOSFET 80 Amps, 24 Volts N-Channel DPAK


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NTD80N02T4G ,Power MOSFET 80 Amps, 24 Volts N-Channel DPAKMAXIMUM RATINGS (T = 25°C unless otherwise noted)JRating Symbol Value UnitSDrain−to−Source Voltage ..
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NTD80N02-001-NTD80N02-1G-NTD80N02G-NTD80N02T4-NTD80N02T4G
Power MOSFET 80 Amps, 24 Volts N-Channel DPAK
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage (Note 3) V Vdc(BR)DSS(V = 0 Vdc, I = 250 Adc) 24 27 −GS DPositive Temperature Coefficient − 25 − mV/°CZero Gate Voltage Drain Current I AdcDSS(V = 0 Vdc, V = 24 Vdc) − − 1.0GS DS(V = 0 Vdc, V = 24 Vdc, T = 125°C) − − 10GS DS JGate−Body Leakage Current (V = ±20 Vdc, V = 0 Vdc) I − − ±100 nAdcGS DS GSSON CHARACTERISTICS (Note 3)Gate Threshold Voltage (Note 3) V VdcGS(th)(V = V , I = 250  Adc) 1.0 1.9 3.0DS GS DNegative Threshold Temperature Coefficient − −3.8 − mV/°CStatic Drain−to−Source On−Resistance (Note 3) R mΩDS(on)(V = 10 Vdc, I = 80 Adc) − 5.0 5.8GS D(V = 4.5 Vdc, I = 40 Adc) − 7.5 9.0GS D(V = 10 Vdc, I = 20 Adc) − 5.0 5.8GS D(V = 4.5 Vdc, I = 20 Adc) 7.5 9.0GS DForward Transconductance (V = 15 Vdc, I = 10 Adc) (Note 3) g − 20 − MhosDS D FSDYNAMIC CHARACTERISTICSInput Capacitance C − 2250 2600 pFiss(V (V = = 20 20 Vdc Vdc,,DS DSOutput Capacitance V V = 0 V 0 V, , C − 900 1100GS GS ossf = 1.0 MHz)Transfer Capacitance C − 400 525rssSWITCHING CHARACTERISTICS (Note 4)Turn−On Delay Time t − 17 30 nsd(on)(V (V = 4.5 =45V Vd dc, cGS GSRise Time t − 67 125rV V = 20 Vdc, = 20 Vdc,DD DDI = 20 Adc,Turn−Off Delay Time D D t − 28 45d(off)R = 2.5 Ω)R 25 Ω)GFall Time t − 40 75fGate Charge GaeC a ge Q − 30 42 nCT(V (V = = 4.5 4.5 Vdc, Vdc,GS GSQ1 − 7.0 12II = 20 Adc, 20 Adc,D DV = 20 Vdc) (Note 3)DSQ2 − 18 28SOURCE−DRAIN DIODE CHARACTERISTICSForward On−Voltage V VdcSD(I = 20 Adc, V = 0 Vdc) (Note 3) − 0.92 1.2S GS(I = 40 Adc, V = 0 Vdc) − 1.05 −S GS(I = 20 Adc, V = 0 Vdc, T = 150°C) − 0.70 −S GS JReverse Recovery T e e se eco e y ime e t − 38 52 ns srr(I (I = 20 Adc, V 20 Ad V = 0 Vdc, 0VdS GSt − 20 −adI dI /dt /dt = = 100 100 A/ A/ s s) ) (Note (Note 3) 3)S St − 18 −bReverse Recovery Stored Charge Q − 0.038 − Crr3. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.4. Switching characteristics are independent of operating junction temperatures.
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