NTD5804N ,40 V, 69 A, Single N−Channel, DPAK, 8.5 m脵 RDS(on)ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
NTD5804NT4G , Power MOSFET 40 V, 69 A, Single N−Channel, DPAK
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NTD5806N ,Power MOSFET, 40 V, 33 A, Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
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OSC1758-400B ,Hybrid Power OscillatorGENERAL DESCRIPTION
The 050758 is a hybrid sine/cosine power oscillator which can
provide 1 maxim ..
OUDH-SS-112D , 10 Amp Miniature, Sealed PC Board Relay
NTD5804N
40 V, 69 A, Single N−Channel, DPAK, 8.5 m脵 RDS(on)
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrainï toï Source Breakdown Voltage V 40 45 VV = 0 V, I = 250 A(BR)DSS GS DDrainï toï Source Breakdown Voltage V /T 41 mV/°C(BR)DSS JTemperature CoefficientZero Gate Voltage Drain Current I T = 25°C 1.0 ADSS JV = 0 V,GSV = 40 VDST = 150°C 100JGateï toï Source Leakage Current I V = 0 V, V = ±20 V ±100 nAGSS DS GSON CHARACTERISTICS (Note 2)Gate Threshold Voltage V V = V , I = 250 A 2.0 3.5 VGS(TH) GS DS DNegative Threshold Temperature V /T 7.3 mV/°CGS(TH) JCoefficientDrainï toï Source On Resistance R V = 10 V, I = 30 A 5.7 7.5 mDS(on) GS DV = 5 V, I = 10 A 7.9 12GS DForward Transconductance gFS V = 15 V, I = 15 A 12 SDS DCHARGES, CAPACITANCES AND GATE RESISTANCESInput Capacitance C 2460 2850 pFissV = 0 V, f = 1.0 MHz,GSOutput Capacitance C 310 400ossV = 25 VDSReverse Transfer Capacitance C 215 280rssTotal Gate Charge Q 45 nCG(TOT)Threshold Gate Charge Q 2.8G(TH)V = 10 V, V = 32 V,GS DSI = 30 ADGateï toï Source Charge Q 10GSGateï toï Drain Charge Q 12.6GDSWITCHING CHARACTERISTICS (Note 3)Turnï On Delay Time t 11.8 nsd(on)Rise Time t 18.7rV = 10 V, V = 32 V,GS DDI = 30 A, R = 2.5 D GTurnï Off Delay Time t 26.8d(off)Fall Time t 5.9fDRAINï SOURCE DIODE CHARACTERISTICSForward Diode Voltage V T = 25°C 0.81 1.2 VSD JV = 0 V,GSI = 10 AST = 150°C 0.63JReverse Recovery Time t 21.7 nsRRCharge Time ta 11.9V = 0 V, dIs/dt = 100 A/s,GSI = 30 ASDischarge Time tb 9.8Reverse Recovery Charge Q 11.8 nCRR2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.3. Switching characteristics are independent of operating junction temperatures.
