NTD5802N ,NTD5802NELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
NTD5803N ,NTD5803NELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
NTD5803NT4G , Power MOSFET 40 V, 76 A, Single N−Channel, DPAK
NTD5804N ,40 V, 69 A, Single N−Channel, DPAK, 8.5 m脵 RDS(on)ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
NTD5804NT4G , Power MOSFET 40 V, 69 A, Single N−Channel, DPAK
NTD5805N ,Power MOSFET, 40 V, 51 A, Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
ORT8850L-1BMN680C , Field-Programmable System Chip (FPSC) Eight-Channel x 850 Mbits/s Backplane Transceiver
OSA-SH-224DM3 , 2 Pole Miniature Power PC Board Relay
OSA-SS-205DM5 , 2 Pole Miniature Power PC Board Relay
OSA-SS-224DM5 , 2 Pole Miniature Power PC Board Relay
OSC1758-400B ,Hybrid Power OscillatorGENERAL DESCRIPTION
The 050758 is a hybrid sine/cosine power oscillator which can
provide 1 maxim ..
OUDH-SS-112D , 10 Amp Miniature, Sealed PC Board Relay
NTD5802N
NTD5802N
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V V = 0 V, I = 10 A 40 V(BR)DSS GS DDrain−to−Source Breakdown Voltage V /T 40 mV/°C(BR)DSS JTemperature CoefficientZero Gate Voltage Drain Current I T = 25°C 1.0 ADSS JV = 0 V,GSV = 40 VDST = 150°C 50JGate−to−Source Leakage Current I V = 0 V, V = 20 V 100 nAGSS DS GSON CHARACTERISTICS (Note 3)Gate Threshold Voltage V V = V , I = 250 A 1.5 3.5 VGS(TH) GS DS DNegative Threshold Temperature V /T−7.4 mV/°CGS(TH) JCoefficientDrain−to−Source On Resistance R V = 10 V, I = 50 A 3.6 4.4 mDS(on) GS DV = 5.0 V, I = 50 A 6.5 7.8GS DForward Transconductance gFS V = 15 V, I = 15 A 16.8 SDS DCHARGES AND CAPACITANCESpFInput Capacitance C 5300issV = 0 V, f = 1.0 MHz,GSOutput Capacitance C 850ossV = 12 VDSReverse Transfer Capacitance C 550rssInput Capacitance C V = 0 V, f = 1.0 MHz, 5025 pFiss GSV = 25 VDSOutput Capacitance C 580ossReverse Transfer Capacitance C 400rssTotal Gate Charge Q 75 100 nCG(TOT)Threshold Gate Charge Q 6.0G(TH)V = 10 V, V = 15 V,GS DSI = 50 ADGate−to−Source Charge Q 18GSGate−to−Drain Charge Q 15GDSWITCHING CHARACTERISTICS (Note 4)Turn−On Delay Time t 14 nsd(on)Rise Time t 52rV = 10 V, V = 20 V,GS DSI = 50 A, R = 2.0 D GTurn−Off Delay Time t 39d(off)Fall Time t 8.5f3. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.4. Switching characteristics are independent of operating junction temperatures.
