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NTD5407NONN/a10000avaiPower MOSFET, 40 V, 38 A, Single N-Channel


NTD5407N ,Power MOSFET, 40 V, 38 A, Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)JParameter Symbol Test Condition Min T ..
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NTD5407N
Power MOSFET, 40 V, 38 A, Single N-Channel
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)JParameter Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrainï toï Source Breakdown Voltage V V = 0 V, I = 250 A 40 V(BR)DSS GS DDrainï toï Source Breakdown Voltage V /T 39 mV/°C(BR)DSS JTemperature CoefficientZero Gate Voltage Drain Current I V = 0 V, T = 25°C 1.0 ADSS GS JV = 40 VDST = 100°C 10JGateï toï Source Leakage Current I V = 0 V, V = ±30 V ±100 nAGSS DS GSON CHARACTERISTICS (Note 2)Gate Threshold Voltage V V = V , I = 250 A 1.5 3.5 VGS(TH) GS DS DGate Threshold Temperature V /Tï 6.0 mV/°CGS(TH) JCoefficientDrainï toï Source On Resistance R V = 10 V, I = 20 A 21 26 mDS(on) GS DV = 5.0 V, I = 10 A 32 40GS DForward Transconductance g V = 10 V, I = 18 A 15 SFS GS DCHARGES AND CAPACITANCESInput Capacitance C 615 1000 pFISSV = 0 V, f = 1.0 MHz, GSOutput Capacitance C 173OSSV = 32 VDSReverse Transfer Capacitance C 80RSSTotal Gate Charge Q 20 nCG(TOT)V = 10 V, V = 32 V, GS DSGateï toï Source Charge Q 2.25GSI = 38 ADGateï toï Drain Charge Q 10.5GDSWITCHING CHARACTERISTICS, V = 10 V (Note 3)GSTurnï On Delay Time t 6.8 nsd(ON)Rise Time t 17rV = 10 V, V = 32 V, GS DDI = 38 A, R = 2.5 D GTurnï Off Delay Time t 66d(OFF)Fall Time t 51fSWITCHING CHARACTERISTICS, V = 5 V (Note 3)GSTurnï On Delay Time t 10 nsd(ON)Rise Time t 175rV = 5 V, V = 20 V, GS DDI = 20 A, R = 2.5 D GTurnï Off Delay Time t 13d(OFF)Fall Time t 23fDRAINï SOURCE DIODE CHARACTERISTICS (Note 2)Forward Diode Voltage VT = 25°C 0.9 1.1 VSD JV = 0 V, GSI = 5.0 AST = 125°C 0.75JReverse Recovery Time t 38 nsRRCharge Time t 20.5aV = 0 V, dI /dt = 100 A/s,GS SI = 15 ASDischarge Time t 17bReverse Recovery Charge Q 40 nCRR2. Pulse Test: pulse width  300 s, duty cycle  2%.3. Switching characteristics are independent of operating junction temperatures.
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