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NTD4909NONN/a10000avai30 V, 41 A, Single N−Channel, DPAK/IPAK


NTD4909N ,30 V, 41 A, Single N−Channel, DPAK/IPAKELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
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NTD4909N
30 V, 41 A, Single N−Channel, DPAK/IPAK
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V V = 0 V, I = 250 A 30 V(BR)DSS GS DDrain−to−Source Breakdown Voltage V /T 15 mV/°C(BR)DSS JTemperature CoefficientZero Gate Voltage Drain Current I T = 25°C 1.0 ADSS JV = 0 V,GSV = 24 VDST = 125°C 10JGate−to−Source Leakage Current I V = 0 V, V = 20 V 100 nAGSS DS GSON CHARACTERISTICS (Note 5)Gate Threshold Voltage V V = V , I = 250 A 1.0 1.7 2.2 VGS(TH)GS DS DNegative Threshold Temperature Coefficient V /T 4.0 mV/°CGS(TH) JDrain−to−Source On Resistance R V = 10 VI = 30 A 6.5 8.0 mDS(on) GS DI = 15 A 6.5DV = 4.5 V I = 30 A 9.5 12GS DI = 15 A 9.5DForward Transconductance gFS V = 1.5 V, I = 30 A 52 SDS DCHARGES AND CAPACITANCESpFInput Capacitance C 1314issV = 0 V, f = 1.0 MHz,GSOutput Capacitance C 487ossV = 15 VDSReverse Transfer Capacitance C 17.4rssTotal Gate Charge Q 7.6 nCG(TOT)Threshold Gate Charge Q 2.1G(TH)V = 4.5 V, V = 15 V,GS DSI = 30 ADGate−to−Source Charge Q 4.3GSGate−to−Drain Charge Q 1.3GDTotal Gate Charge Q V = 10 V, V = 15 V, 17.5 nCG(TOT) GS DSI = 30 ADSWITCHING CHARACTERISTICS (Note 6)Turn−On Delay Time t 11 nsd(on)Rise Time t 21rV = 4.5 V, V = 15 V,GS DSI = 15 A, R = 3.0 D GTurn−Off Delay Time t 17d(off)Fall Time t 2.7fTurn−On Delay Time t 8.0 nsd(on)Rise Time t 19rV = 10 V, V = 15 V,GS DSI = 15 A, R = 3.0 D GTurn−Off Delay Time t 21d(off)Fall Time t 2.3f5. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.6. Switching characteristics are independent of operating junction temperatures.
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