NTD4906N ,Power MOSFET, 30 V, 54 A, Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
NTD4906N-35G , Power MOSFET 30 V, 54 A, Single N−Channel, DPAK/IPAK
NTD4909N ,30 V, 41 A, Single N−Channel, DPAK/IPAKELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
NTD4909N-35G , Power MOSFET 30 V, 41 A, Single N−Channel, DPAK/IPAK
NTD4909NT4G , Power MOSFET 30 V, 41 A, Single N−Channel, DPAK/IPAK
NTD4910N ,Power MOSFET, 30 V, 37 A, Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
ORT42G5-1BMN484C , 0.6 to 3.7 Gbps XAUI and FC FPSCs
ORT8850L-1BMN680C , Field-Programmable System Chip (FPSC) Eight-Channel x 850 Mbits/s Backplane Transceiver
OSA-SH-224DM3 , 2 Pole Miniature Power PC Board Relay
OSA-SS-205DM5 , 2 Pole Miniature Power PC Board Relay
OSA-SS-224DM5 , 2 Pole Miniature Power PC Board Relay
OSC1758-400B ,Hybrid Power OscillatorGENERAL DESCRIPTION
The 050758 is a hybrid sine/cosine power oscillator which can
provide 1 maxim ..
NTD4906N
Power MOSFET, 30 V, 54 A, Single N-Channel
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrainï toï Source Breakdown Voltage V V = 0 V, I = 250 A 30 V(BR)DSSGS DDrainï toï Source Breakdown Voltage V /T 15 mV/°C(BR)DSS JTemperature CoefficientZero Gate Voltage Drain Current I AT = 25°C 1.0DSS JV = 0 V,GSV = 24 VDS T = 125°C 10JGateï toï Source Leakage Current I V = 0 V, V = 20 V 100 nAGSS DS GSON CHARACTERISTICS (Note 3)Gate Threshold Voltage V V = V , I = 250 A 1.0 1.6 2.2 VGS(TH) GS DS DNegative Threshold Temperature V /T 4.0 mV/°CGS(TH) JCoefficientDrainï toï Source On Resistance R V = 10 V mI = 30 A 4.6 5.5DS(on) GS DI = 15 A 4.6DV = 4.5 V I = 30 A 6.5 8.0GS DI = 15 A 6.5DForward Transconductance gFS V = 1.5 V, I = 30 A 52 SDS DCHARGES AND CAPACITANCESpFInput Capacitance C 1932issV = 0 V, f = 1.0 MHz,GSOutput Capacitance C 642ossV = 15 VDSReverse Transfer Capacitance C 19rssnCTotal Gate Charge Q 11G(TOT)Threshold Gate Charge Q 3.0G(TH)V = 4.5 V, V = 15 V,GS DSI = 30 ADGateï toï Source Charge Q 5.9GSGateï toï Drain Charge Q 1.8GDTotal Gate Charge Q V = 10 V, V = 15 V, 24 nCG(TOT) GS DSI = 30 ADSWITCHING CHARACTERISTICS (Note 4)Turnï On Delay Time t 13 nsd(on)Rise Time t 21r V = 4.5 V, V = 15 V,GS DSI = 15 A, R = 3.0 Turnï Off Delay Time t D G 20d(off)Fall Time t 3.7fnsTurnï On Delay Time t 7.7d(on)Rise Time t 19rV = 10 V, V = 15 V,GS DSI = 15 A, R = 3.0 D GTurnï Off Delay Time t 22d(off)Fall Time t 2.3f3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.4. Switching characteristics are independent of operating junction temperatures.
