NTD4805N ,Power MOSFET, 30 V, 88 A, Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
NTD4805N-1G , Power MOSFET 30 V, 88 A, Single N−Channel, DPAK/IPAK
NTD4806N ,Power MOSFET, 30 V, 76 A, Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
NTD4806N-35G , Power MOSFET 30 V, 76 A, Single N--Channel, DPAK/IPAK
NTD4808N ,Power MOSFET, 30 V, 63 A, Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Mi ..
NTD4808N-1G , Power MOSFET 30 V, 63 A, Single N--Channel, DPAK/IPAK
OR8GU41 ,DIFFUSED TYPE (HIGH SPEED RECTIFIER APPLICATIONS)APPLICATIONS Unit in mm(FAST RECOVERY)Average Forward Current: IF (AV) = 0.8A (Ta = 40°C){.65i1Repe ..
ORT42G5-1BMN484C , 0.6 to 3.7 Gbps XAUI and FC FPSCs
ORT8850L-1BMN680C , Field-Programmable System Chip (FPSC) Eight-Channel x 850 Mbits/s Backplane Transceiver
OSA-SH-224DM3 , 2 Pole Miniature Power PC Board Relay
OSA-SS-205DM5 , 2 Pole Miniature Power PC Board Relay
OSA-SS-224DM5 , 2 Pole Miniature Power PC Board Relay
NTD4805N
Power MOSFET, 30 V, 88 A, Single N-Channel
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)JParameter Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V V = 0 V, I = 250 A 30 V(BR)DSS GS DDrain−to−Source Breakdown Voltage V /T 27 mV/C(BR)DSS JTemperature CoefficientZero Gate Voltage Drain Current IT = 25C 1.0 ADSS JV = 0 V,GSV = 24 VDST = 125C 10JGate−to−Source Leakage Current I V = 0 V, V = 20 V 100 nAGSS DS GSON CHARACTERISTICS (Note 3)Gate Threshold Voltage V V = V , I = 250 A 1.5 2.5 VGS(TH) GS DS DNegative Threshold Temperature Coefficient V /T 5.86 mV/CGS(TH) JDrain−to−Source On Resistance R V = 10 to I = 30 A 4.3 5.0 mDS(on) GS D11.5 VI = 15 A 4.2DV = 4.5 V I = 30 A 6.0 7.4GS DI = 15 A 5.8DForward Transconductance g V = 15 V, I = 15 A 17 SFS DS DCHARGES AND CAPACITANCESInput Capacitance C 2865 pFissV = 0 V, f = 1.0 MHz,GSOutput Capacitance C 610ossV = 12 VDSReverse Transfer Capacitance C 338rssTotal Gate Charge Q 20.5 26 nCG(TOT)Threshold Gate Charge Q 4.05G(TH)V = 4.5 V, V = 15 V,GS DSI = 30 ADGate−to−Source Charge Q 8.28GSGate−to−Drain Charge Q 8.36GDTotal Gate Charge Q V = 11.5 V, V = 15 V, 48 nCG(TOT) GS DSI = 30 ADSWITCHING CHARACTERISTICS (Note 4)Turn−On Delay Time t 17.2 nsd(on)Rise Time t 20.3rV = 4.5 V, V = 15 V,GS DSI = 15 A, R = 3.0 Turn−Off Delay Time t D G 20.8d(off)Fall Time t 8.0fTurn−On Delay Time t 10.8 nsd(on)Rise Time t 20.5rV = 11.5 V, V = 15 V,GS DSI = 15 A, R = 3.0 D GTurn−Off Delay Time t 30.8d(off)Fall Time t 4.4f3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.4. Switching characteristics are independent of operating junction temperatures.
