NTD32N06T4G ,Power MOSFET 32 Amps, 60 Volts3R , DRAIN−TO−SOURCE RESISTANCE ()R , DRAIN−TO−SOURCE RESISTANCE I , DRAIN CURRENT (AMPS)DS(on) DS ..
NTD40N03R ,Power MOSFET 45 Amps / 25 Volts / N-Channel DPAKELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)J Characteristics Symbol Min Typ Ma ..
NTD40N03R-1G ,Power MOSFET 45 Amps, 25 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)J Characteristics Symbol Min Typ Ma ..
NTD40N03RG ,Power MOSFET 45 Amps, 25 Volts2NTD40N03R20 2010 V3.5 VV ≥ 10 VDS3.4 V8 V16 166 V4 V3.2 V12 1288T = 25°CJ3 V4 2.8 V4T = 125°CJV = ..
NTD40N03RT4 ,Power MOSFET 45 Amps, 25 VoltsMAXIMUM RATINGS (T = 25°C unless otherwise specified)J Parameter Symbol Value UnitGDrain−to−Source ..
NTD40N03RT4G ,Power MOSFET 45 Amps, 25 Volts3R , DRAIN−TO−SOURCE RESISTANCE ()R , DRAIN−TO−SOURCE RESISTANCE I , DRAIN CURRENT (AMPS)DS(on) DS ..
OR3T80-6PS240 , 3C and 3T Field-Programmable Gate Arrays
OR8GU41 ,DIFFUSED TYPE (HIGH SPEED RECTIFIER APPLICATIONS)APPLICATIONS Unit in mm(FAST RECOVERY)Average Forward Current: IF (AV) = 0.8A (Ta = 40°C){.65i1Repe ..
ORT42G5-1BMN484C , 0.6 to 3.7 Gbps XAUI and FC FPSCs
ORT8850L-1BMN680C , Field-Programmable System Chip (FPSC) Eight-Channel x 850 Mbits/s Backplane Transceiver
OSA-SH-224DM3 , 2 Pole Miniature Power PC Board Relay
OSA-SS-205DM5 , 2 Pole Miniature Power PC Board Relay
NTD32N06G-NTD32N06T4G
Power MOSFET 32 Amps, 60 Volts
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage (Note 4) V Vdc(BR)DSS(V = 0 Vdc, I = 250 Adc) 60 70 −GS DTemperature Coefficient (Positive) − 41.6 − mV/°CZero Gate Voltage Drain Current I AdcDSS(V = 60 Vdc, V = 0 Vdc) − − 1.0DS GS(V = 60 Vdc, V = 0 Vdc, T = 150°C) − − 10DS GS JGate−Body Leakage Current (V = ±20 Vdc, V = 0 Vdc) I − − ±100 nAdcGS DS GSSON CHARACTERISTICS (Note 4)Gate Threshold Voltage (Note 4) V VdcGS(th)(V = V , I = 250 Adc) 2.0 2.8 4.0DS GS DThreshold Temperature Coefficient (Negative) − 7.0 − mV/°CStatic Drain−to−Source On−Resistance (Note 4) R mDS(on)(V = 10 Vdc, I = 16 Adc) − 21 26GS DStatic Drain−to−Source On−Voltage (Note 4) V VdcDS(on)(V = 10 Vdc, I = 20 Adc) − 0.417 0.62GS D(V = 10 Vdc, I = 32 Adc) − 0.680 −GS D(V = 10 Vdc, I = 16 Adc, T = 150°C) − 0.633 −GS D JForward Transconductance (Note 4) (V = 6 Vdc, I = 16 Adc) g − 21.1 − mhosDS D FSDYNAMIC CHARACTERISTICSInput Capacitance C − 1231 1725 pFiss(V (V = 25 Vdc, V 25 Vd V = 0 Vdc, 0VdDS GSOutput Capacitance C − 346 485ossf f = 1.0 MHz = 1.0 MHz) )Transfer Capacitance C − 77 160rssSWITCHING CHARACTERISTICS (Note 5)Turn−On Delay Time t − 10 25 nsd(on)(V = 30 Vdc, I = 32 Adc,Rise Time DD D t − 84 180rV V = 10 Vdc, =10VdcGS GSTurn−Off Delay Time t − 31 70R R = 9.1 9.1 ) (Note 4) ) (Note 4) d(off)G GFall Time t − 93 200fGate ChargeQ − 33 60 nCT(V (V = 48 Vdc, I 48 Vd I = 32 Adc, 32 AdDS DQ − 6.0 −1V V = 10 Vdc = 10 Vdc) ) ( (Note Note 4 4) )GS GSQ − 15 −2SOURCE−DRAIN DIODE CHARACTERISTICSForward On−Voltage (I = 20 Adc, V = 0 Vdc) (Note 4) V − 0.89 1.0 VdcS GS SD(I = 32 Adc, V = 0 Vdc) (Note 4) − 0.96 −S GS(I = 20 Adc, V = 0 Vdc, T = 150°C) − 0.75 −S GS JReverse Recovery Time t − 52 − nsrr(I (I = 32 Adc, V 32 Ad V = 0 Vdc, 0VdS GSt − 37 −adI dI /dt = 100 A/ /dt = 100 A/s s) ) (Note (Note 4 4) )S St − 14.3 −bReverse Recovery Stored Charge Q − 0.095 − CRR4. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.5. Switching characteristics are independent of operating junction temperatures.
