NTD3055-150G ,N-Channel DPAK3R , DRAIN−TO−SOURCE RESISTANCE R , DRAIN−TO−SOURCE RESISTANCE ()I , DRAIN CURRENT (AMPS)DS(on) DS ..
NTD3055-150T4 ,N-Channel DPAK2NTD3055−1502020V = 10 V V ≥ 10 VGS DS1616V = 9 VGSV = 7 VGSV = 8 VGS1212V = 6 V8 GS 8T = 25°CJ44V ..
NTD3055-150T4G ,N-Channel DPAKMaximum ratings applied to the device are individual stress limit values (notW = Work Weeknormal op ..
NTD3055L104 ,Power MOSFET 12 Amps, 60 Volts, Logic Level3R , DRAIN−TO−SOURCE RESISTANCE R , DRAIN−TO−SOURCE RESISTANCE () I , DRAIN CURRENT (AMPS)DS(on) D ..
NTD3055L104-1G ,Power MOSFET 12 Amps, 60 Volts, Logic Level2NTD3055L10424 245 VV = 10 VGSV ≥ 10 VDS20 208 V4.5 V16 166 V4 V12123.5 V8 8T = 25°CJ4 3 V4T = 100° ..
NTD3055L104G ,Power MOSFET 12 Amps, 60 Volts, Logic LevelMaximum ratings applied to the device are individual stress limit values (notnormal operating condi ..
OR2T40A-6PS208 , Field-Programmable Gate Arrays
OR3T125-6PS208 , 3C and 3T Field-Programmable Gate Arrays
OR3T20-6BA256 , 3C and 3T Field-Programmable Gate Arrays
OR3T55-6BA256 , 3C and 3T Field-Programmable Gate Arrays
OR3T55-7BA256 , 3C and 3T Field-Programmable Gate Arrays
OR3T55-7PS208 , 3C and 3T Field-Programmable Gate Arrays
NTD3055-150-NTD3055-150G-NTD3055-150T4-NTD3055-150T4G
N-Channel DPAK
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage (Note 3) V Vdc(BR)DSS60 − −(V = 0 Vdc, I = 250 Adc)GS D− 70.2 − mV/°CTemperature Coefficient (Positive)Zero Gate Voltage Drain Current I AdcDSS− − 1.0(V = 60 Vdc, V = 0 Vdc)DS GS− − 10(V = 60 Vdc, V = 0 Vdc, T = 150°C)DS GS JGate−Body Leakage Current (V = ±20 Vdc, V = 0 Vdc) I − − ±100 nAdcGS DS GSSON CHARACTERISTICS (Note 3)Gate Threshold Voltage (Note 3) V VdcGS(th)2.0 3.0 4.0(V = V , I = 250 Adc)DS GS D− 6.4 − mV/°CThreshold Temperature Coefficient (Negative)Static Drain−to−Source On−Resistance (Note 3) R mDS(on)− 122 150(V = 10 Vdc, I = 4.5 Adc)GS DStatic Drain−to−Source On−Voltage (Note 3) V VdcDS(on)− 1.4 1.9(V = 10 Vdc, I = 9.0 Adc)GS D− 1.1 −(V = 10 Vdc, I = 4.5 Adc, T = 150°C)GS D JForward Transconductance (Note 3) (V = 7.0 Vdc, I = 6.0 Adc) g − 5.4 − mhosDS D FSDYNAMIC CHARACTERISTICSInput Capacitance C − 200 280 pFiss(V = 25 Vdc, V = 0 Vdc,DS GSOutput Capacitance C − 70 100ossf f = 1.0 MHz = 1.0 MHz) )Transfer Capacitance C − 26 40rssSWITCHING CHARACTERISTICS (Note 4)Turn−On Delay Time t − 11.2 25 nsd(on)(V = 48 Vdc, I = 9.0 Adc,Rise Time DD D t − 37.1 80rV V = 10 Vdc, =10VdcGS GSTurn−Off Delay Time t − 12.2 25R = 9.1 ) (Note 3))( ) d(off)G GFall Time t − 23 50fGate Charge Q − 7.1 15 nCT(V = 48 Vdc, I = 9.0 Adc,DS DQ − 1.7 −1V V = 10 Vdc = 10 Vdc) ) ( (Note Note 3 3) )GS GSQ − 3.5 −2SOURCE−DRAIN DIODE CHARACTERISTICSForward On−Voltage (I = 9.0 Adc, V = 0 Vdc) (Note 3) V − 0.98 1.20 VdcS GS SD(I = 19 Adc, V = 0 Vdc, T = − 0.86 −S GS J150°C)Reverse Recovery Time t − 28.9 − nsrr(I = 9.0 Adc, V = 0 Vdc,S GSt − 21.6 −adI dI /dt /dt = 100 A/ = 100 A/s s) ) (Note (Note 3 3) )S St − 7.3 −bReverse Recovery Stored Charge Q − 0.036 − CRR3. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.4. Switching characteristics are independent of operating junction temperatures.
