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NTB6413ANONN/a10000avaiPower MOSFET, 100 V, 42 A, 28 mΩ, N-Channel


NTB6413AN ,Power MOSFET, 100 V, 42 A, 28 mΩ, N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C Unless otherwise specified) JCharacteristics Symbol Test Condi ..
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NTB6413AN
Power MOSFET, 100 V, 42 A, 28 mΩ, N-Channel
ELECTRICAL CHARACTERISTICS (T = 25°C Unless otherwise specified) JCharacteristics Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrainï toï Source Breakdown Voltage V V = 0 V, I = 250 A 100 V(BR)DSS GS DDrainï toï Source Breakdown Voltage Temper- V /T 115 mV/°C(BR)DSS Jature CoefficientZero Gate Voltage Drain Current I V = 0 V, T = 25°C 1.0 ADSS GS JV = 100 VDST = 125°C 100JGateï toï Source Leakage Current I V = 0 V, V = 20 V 100 nAGSS DS GSON CHARACTERISTICS (Note 2)Gate Threshold Voltage V V = V , I = 250 A 2.0 4.0 VGS(th) GS DS DNegative Threshold Temperature Coefficient V /T 8.1 mV/°CGS(th) JDrainï toï Source Onï Resistance R V = 10 V, I = 42 A 25.6 28 mDS(on) GS DForward Transconductance g V = 5 V, I = 20 A 17.9 SFS GS DCHARGES, CAPACITANCES & GATE RESISTANCEInput Capacitance C 1800 pFissV = 25 V, V = 0 V,DS GSOutput Capacitance C 280ossf = 1 MHzReverse Transfer Capacitance C 100rssTotal Gate Charge Q 51 nCG(TOT)Threshold Gate Charge Q 2.0G(TH)V = 10 V, V = 80 V,GS DSGateï toï Source Charge Q 10GSI = 42 ADGateï toï Drain Charge Q 26GDPlateau Voltage V 5.8 VGPGate Resistance R 2.4 GSWITCHING CHARACTERISTICS, V = 10 V (Note 3)GSTurnï On Delay Time t 13 nsd(on)Rise Time t 84rV = 10 V, V = 80 V,GS DDI = 42 A, R = 6.2D GTurnï Off Delay Time t 52d(off)Fall Time t 71fDRAINï SOURCE DIODE CHARACTERISTICSForward Diode Voltage V T = 25°C 0.92 1.3 VSDJI = 42 AST = 125°C 0.83JnsReverse Recovery Time t 73rrCharge Time t 56aV = 0 V, I = 42 A,GS SdI /dt = 100 A/sSDDischarge Time t 17bReverse Recovery Charge Q 230 nCRR2. Pulse Test: Pulse Width  300 s, Duty Cycle  2%.3. Switching characteristics are independent of operating junction temperatures.
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