NTB6410AN ,NTB6410ANELECTRICAL CHARACTERISTICS (T = 25°C Unless otherwise specified) JCharacteristics Symbol Test Condi ..
NTB6410ANG , N-Channel Power MOSFET 100 V, 76 A, 13 mΩ
NTB6410ANT4G , N-Channel Power MOSFET 100 V, 76 A, 13 mΩ
NTB6411AN ,NTB6411ANELECTRICAL CHARACTERISTICS (T = 25°C Unless otherwise specified) JCharacteristics Symbol Test Condi ..
NTB6411ANG , N-Channel Power MOSFET 100 V, 72 A, 14 mΩ
NTB6411ANT4G , N-Channel Power MOSFET 100 V, 72 A, 14 mΩ
OPA847IDBVR ,Wideband, Ultra-Low Noise,Voltage Feedback Operational Amplifier with ShutdownOPA847OPA847
OPA847IDBVT ,Wideband, Ultra-Low Noise,Voltage Feedback Operational Amplifier with ShutdownTYPICAL CHARACTERISTICS: V = ±5VST = 25°C, G = +20V/V, R = 39.2Ω , and R = 100Ω , unless otherwise ..
OPA847IDBVTG4 ,Wideband, Ultra-Low Noise,Voltage Feedback Operational Amplifier with Shutdown 6-SOT-23 -40 to 85 SBOS251E – JULY 2002 – REVISED DECEMBER 2008Wideband, Ultra-Low Noise, Voltage-FeedbackOPERATIONAL ..
OPA860 ,Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER (OTA) and BUFFERMAXIMUM RATINGSPower Supply ±6.5VDCInternal Power Dissipation See Thermal InformationDifferential I ..
OPA860ID ,Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER (OTA) and BUFFERFEATUREScentered about zero. The transconductance of the• Low Quiescent Current (11.2mA)OTA can be ..
OPA860IDRG4 ,Wide Bandwidth Operational Transconductance Amplifier and Buffer 8-SOIC -40 to 85ELECTRICAL CHARACTERISTICS: V = ±5V (continued)SR = 500Ω and R = 250Ω, unless otherwise noted.L ADJ ..
NTB6410AN
NTB6410AN
ELECTRICAL CHARACTERISTICS (T = 25°C Unless otherwise specified) JCharacteristics Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V V = 0 V, I = 250 A 100 V(BR)DSS GS DDrain−to−Source Breakdown Voltage Temper- V /T 94 mV/°C(BR)DSS Jature CoefficientZero Gate Voltage Drain Current I V = 0 V,T = 25°C 1.0 ADSS GS JV = 100 VDST = 150°C 100JGate−to−Source Leakage Current I V = 0 V, V = 20 V 100 nAGSS DS GSON CHARACTERISTICS (Note 2)Gate Threshold Voltage V V = V , I = 250 A 2.0 4.0 VGS(th) GS DS DNegative Threshold Temperature Coefficient V /T 9.0 mV/°CGS(th) JDrain−to−Source On−Resistance RV = 10 V, I = 76 A 11 13 mDS(on) GS DV = 10 V, I = 20 A 10 12GS DForward Transconductance g V = 5 V, I = 20 A 40 SFS DS DCHARGES, CAPACITANCES & GATE RESISTANCEInput Capacitance C 4500 pFissV = 25 V, V = 0 V,DS GSOutput Capacitance C 650ossf = 1 MHzReverse Transfer Capacitance C 250rssTotal Gate Charge Q 120 nCG(TOT)Threshold Gate Charge Q 5.2G(TH)V = 10 V, V = 80 V,GS DSGate−to−Source Charge Q 20GSI = 76 ADGate−to−Drain Charge Q 57GDPlateau Voltage V 5.1 VGPGate Resistance R 2.4 GSWITCHING CHARACTERISTICS, V = 10 V (Note 3)GSnsTurn−On Delay Time t 17d(on)Rise Time t 170rV = 10 V, V = 80 V,GS DDI = 76 A, R = 6.2D GTurn−Off Delay Time t 120d(off)Fall Time t 190fDRAIN−SOURCE DIODE CHARACTERISTICSForward Diode Voltage V T = 25°C 1.0 1.3 VSD JI = 76 AST = 125°C 0.9JReverse Recovery Time t 93 nsrrCharge Time t 69aV = 0 V, I = 76 A, GS SdI /dt = 100 A/sSDDischarge Time t 24bReverse Recovery Charge Q 300 nCRR2. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.3. Switching characteristics are independent of operating junction temperatures.
