| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| NTB5860NLT4G |
ON|ON Semiconductor |
N/a |
10000 |
 |
N-Channel Power MOSFET |
NTB5860NLT4G , N-Channel Power MOSFET
NTB5860NT4G , N-Channel Power MOSFET
NTB60N06 ,Power MOSFET 60 Amps, 60 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
NTB60N06G ,Power MOSFET 60 Amps, 60 Volts3R DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) R , DRAIN−TO−SOURCE RESISTANCE () I , DRAIN CURRENT (AM ..
NTB60N06L ,Power MOSFET 60 Amps, 60 Volts, Logic Level3R DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) R , DRAIN-TO-SOURCE RESISTANCE () I , DRAIN CURRENT (AM ..
OPA846IDBVT ,OPA846: Wideband, Low Noise, Voltage Feedback Operational AmplifierTYPICAL CHARACTERISTICS: V = ±5VST = 25°C, G = +10, R = 453Ω , R = 50Ω , and R = 100Ω , unless othe ..
OPA846IDR ,OPA846: Wideband, Low Noise, Voltage Feedback Operational AmplifierELECTRICAL CHARACTERISTICS: V = ±5VSBoldface limits are tested at +25°C.R = 453Ω , R = 100Ω, and G ..
OPA847 ,Wideband, Ultra-Low Noise,Voltage Feedback Operational Amplifier with ShutdownELECTRICAL CHARACTERISTICS: V = ±5VSBoldface limits are tested at +25°C.R = 100Ω , R = 750Ω, R = 39 ..
