NTB5860NL ,60 V, 3 mOhm, 220 A, N-Channel, Logic Level, D2PAK Power MOSFETELECTRICAL CHARACTERISTICS (T = 25°C Unless otherwise specified) JCharacteristics Symbol Test Condi ..
NTB5860NLT4G , N-Channel Power MOSFET
NTB5860NT4G , N-Channel Power MOSFET
NTB60N06 ,Power MOSFET 60 Amps, 60 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
NTB60N06G ,Power MOSFET 60 Amps, 60 Volts3R DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) R , DRAIN−TO−SOURCE RESISTANCE () I , DRAIN CURRENT (AM ..
NTB60N06L ,Power MOSFET 60 Amps, 60 Volts, Logic Level3R DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) R , DRAIN-TO-SOURCE RESISTANCE () I , DRAIN CURRENT (AM ..
OPA846IDBVR ,OPA846: Wideband, Low Noise, Voltage Feedback Operational AmplifierFEATURES APPLICATIONS* HIGH BANDWIDTH: 400MHz (G = +10) * HIGH DYNAMIC RANGE ADC PREAMPS* LOW INPUT ..
OPA846IDBVT ,OPA846: Wideband, Low Noise, Voltage Feedback Operational AmplifierTYPICAL CHARACTERISTICS: V = ±5VST = 25°C, G = +10, R = 453Ω , R = 50Ω , and R = 100Ω , unless othe ..
OPA846IDR ,OPA846: Wideband, Low Noise, Voltage Feedback Operational AmplifierELECTRICAL CHARACTERISTICS: V = ±5VSBoldface limits are tested at +25°C.R = 453Ω , R = 100Ω, and G ..
OPA847 ,Wideband, Ultra-Low Noise,Voltage Feedback Operational Amplifier with ShutdownELECTRICAL CHARACTERISTICS: V = ±5VSBoldface limits are tested at +25°C.R = 100Ω , R = 750Ω, R = 39 ..
OPA847 ,Wideband, Ultra-Low Noise,Voltage Feedback Operational Amplifier with ShutdownMAXIMUM RATINGSELECTROSTATICPower Supply ....... ±6.5VDCDISCHARGE SENSITIVITYInternal Power Dissipa ..
OPA847ID ,Wideband, Ultra-Low Noise,Voltage Feedback Operational Amplifier with ShutdownHarmonic Distortion (dBc)(1)ABSOLUTE
NTB5860NL
60 V, 3 mOhm, 220 A, N-Channel, Logic Level, D2PAK Power MOSFET
ELECTRICAL CHARACTERISTICS (T = 25°C Unless otherwise specified) JCharacteristics Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrainï toï Source Breakdown Voltage V V = 0 V, I = 250 A 60 V(BR)DSS DS DDrainï toï Source Breakdown Voltage V /T 6.1 mV/°C(BR)DSS JI = 250 ADTemperature CoefficientZero Gate Voltage Drain Current I V = 0 V T = 25°C 1.0 ADSS GS JV = 60 VDSV = 0 V T = 125°C 100GS JV = 60 VDSGateï Source Leakage Current I V = 0 V, V = 20 V 100 nAGSS DS GSON CHARACTERISTICS (Note 2)Gate Threshold Voltage V V = V , I = 250 A 1.0 3.0 VGS(th) GS DS DThreshold Temperature Coefficient V /Tï 7.7 mV/°CGS(th) JDrainï toï Source Onï Resistance R V = 10 V, I = 20 A 2.4 3.0 mDS(on) GS DV = 4.5 V, I = 20 A 2.8 3.6GS DForward Transconductance g V = 15 V, I = 30 A 47 SFS DS DCHARGES, CAPACITANCES & GATE RESISTANCEInput Capacitance C 13216 pFissV = 25 V, V = 0 V,DS GSOutput Capacitance C 1127ossf = 1 MHzTransfer Capacitance C 752rssTotal Gate Charge Q 220 nCG(TOT)Threshold Gate Charge Q 13G(TH)V = 10 V, V = 48 V,GS DSI = 40 ADGateï toï Source Charge Q 37GSGateï toï Drain Charge Q 54GDSWITCHING CHARACTERISTICS, V = 10 V (Note 3)GSTurnï On Delay Time t 25 nsd(on)Rise Time t 58rV = 10 V, V = 48 V,GS DDI = 100 A, R = 2.5D GTurnï Off Delay Time t 98d(off)Fall Time t 144fDRAINï SOURCE DIODE CHARACTERISTICSForward Diode Voltage V T = 25°C 0.76 1.1 VSD J dcV = 0 VGSI = 40 AST = 125°C 0.60JReverse Recovery Time t 50 nsrrCharge Time t 25aV = 0 V, I = 100 A,GS SdI /dt = 20 A/sSDischarge Time t 25bReverse Recovery Stored Charge Q 71 nCRR2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.3. Switching characteristics are independent of operating junction temperatures.
