NTB25P06T4G ,Power MOSFET 25 A, 60 V P-Channel D2PAKMAXIMUM RATINGS (T = 25°C unless otherwise noted)JRating Symbol Value UnitGDrain−to−Source Voltage ..
NTB25P06T4G ,Power MOSFET 25 A, 60 V P-Channel D2PAK3R , DRAIN−TO−SOURCE RESISTANCE R , DRAIN−TO−SOURCE RESISTANCE ()−I , DRAIN CURRENT (AMPS)DS(on) D ..
NTB30N06LG ,Power MOSFET 30 Amps, 60 Volts, Logic Level3R , DRAIN−TO−SOURCE RESISTANCE R , DRAIN−TO−SOURCE RESISTANCE ()I , DRAIN CURRENT (AMPS)DS(on) DS ..
NTB30N06LT4 ,Power MOSFET 30 Amps, 60 Volts, Logic LevelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
NTB30N20 ,Power MOSFET 30 Amps, 200 Volts N-Channel Enhancement-Mode D2PAK3R DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) R , DRAIN−TO−SOURCE RESISTANCE () I , DRAIN CURRENT (AM ..
NTB35N15 ,Power MOSFET 37 Amps, 150 Volts3R DRAIN–TO–SOURCE RESISTANCE (NORMALIZED) R , DRAIN–TO–SOURCE RESISTANCE () I , DRAIN CURRENT (AM ..
OPA820ID ,Unity Gain Stable,Low Noise,Voltage Feedback Operational AmplifierMaximum Ratings.. 313 Device and Documentation Support........ 377.2 ESD Ratings........ 413.1 Devi ..
OPA820ID ,Unity Gain Stable,Low Noise,Voltage Feedback Operational AmplifierMaximum Ratings(1)over operating free-air temperature range (unless otherwise noted)MIN MAX UNITPow ..
OPA820IDBVR ,Unity-Gain Stable/ Low-Noise/ Voltage-Feedback Operational AmplifierFEATURESOPA354 OPA2354 — OPA4354 CMOS RR outputOPA690 OPA2690 OPA3690 — High-slew rate— OPA2652 — — ..
OPA820IDBVRG4 ,Unity Gain Stable,Low Noise,Voltage Feedback Operational Amplifier 5-SOT-23 -40 to 85Maximum Ratings may cause permanent damage to the device. These are stress ratingsonly, which do no ..
OPA820IDBVT ,Unity-Gain Stable/ Low-Noise/ Voltage-Feedback Operational AmplifierFeatures... 110 Application and Implementation...... 282 Applications..... 110.1 Application Inform ..
OPA820IDR ,Unity-Gain Stable/ Low-Noise/ Voltage-Feedback Operational AmplifierElectrical Characteristics: V = 5 V 7S13.5 Trademarks..... 387.7 Typical Characteristics........ 10 ..
NTB25P06-NTB25P06G-NTB25P06T4G
Power MOSFET 25 A, 60 V P-Channel D2PAK
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage (Note 3) V V(BR)DSS(V = 0 V, I = −250 A) −60 − −GS DmV/°C(Positive Temperature Coefficient) − 64 −Zero Gate Voltage Drain Current I ADSS(V = 0 V, V = −60 V, T = 25°C) − − −10GS DS J(V = 0 V, V = −60 V, , T = 150°C) − − −100GS DS JGate−Body Leakage Current (V = ±15 V, V = 0 V) I − − ±100 nAGS DS GSSON CHARACTERISTICS (Note 3)Gate Threshold Voltage V VGS(th)(V = V I = −250 A) −2.0 −2.8 −4.0DS GS, DmV/°C(Negative Threshold Temperature Coefficient) − 6.2 −Static Drain−Source On−State Resistance R DS(on)(V = −10 V, I = −12.5 A) − 0.065 0.075GS D(V = −10 V, I = −25 A) − 0.070 0.082GS DForward Transconductance gFS Mhos(V = −10 V, I = −12.5 A) − 13 −DS DDYNAMIC CHARACTERISTICSInput Capacitance C − 1200 1680 pFiss(V = −25 V, V = 0 V,DS GSOutput Capacitance C − 345 480ossF = 1.0 MHz F = 1.0 MHz) )Reverse Transfer Capacitance C − 90 180rssSWITCHING CHARACTERISTICS (Notes 3 & 4)Turn−On Delay Time t − 14 24 nsd(on)Rise Time t − 72 118 nsr(V (V = −30 V = −30 V, , I I = −25 A, = −25 A,DD DD D DV = −10 V R = 9.1 )GS GTurn−Off Delay Time t − 43 68 nsd(off)Fall Time t − 190 320 nsfGate ChargeQ − 33 50 nCT(V = −48 V, I = −25 A,DS DQ − 6.5 −1V V = −10 V = −10 V) )GS GSQ − 15 −2BODY−DRAIN DIODE RATINGS (Note 3)Diode Forward On−Voltage (I = −25 A, V = 0 V) V − −1.8 −2.5 VS GS SD(I = −25 A, V = 0 V, T = 150°C)− −1.4 −S GS JReverse Recovery Time t − 70 − nsrr(I = −25 A, V = 0 V,S GSt − 50 −adI dI /dt /dt = 100 A/ = 100 A/s s) )S St − 20 −bReverse Recovery Stored Charge Q − 0.2 − CRR3. Indicates Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.4. Switching characteristics are independent of operating junction temperatures.
