NSS30101LT1G ,30 V, 2 A, Low VCE(sat) NPN TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Max UnitOFF ..
NSS30201MR6T1G ,Low VCE(sat) Transistor, NPN, 30 V, 2.0 A, SOT-23 PackageELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
NSS35200CF8T1G ,High Current Surface Mount PNP Silicon Low VCE-SAT Switching Transistor for Load Management in Portable ApplicationsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typical Max ..
NSS40200UW6T1G , 40 V, 4.0 A, Low VCE(sat) PNP Transistor
NSS40300MDR2G , Dual Matched 40 V, 6.0 A, Low VCE(sat) PNP Transistor
NSS40500UW3T2G , 40 V, 6.0 A, Low VCE(sat) PNP Transistor
OPA2376AIDGKR ,Precision, Low Noise, Low Quiescent Current Operational Amplifier 8-VSSOP -40 to 125Electrical Characteristics...... 811.5 Trademarks..... 246.8 Typical Characteristics........ 1011.6 ..
OPA2376AIDGKRG4 ,Precision, Low Noise, Low Quiescent Current Operational Amplifier 8-VSSOP -40 to 125Block Diagram... 14Information..... 257.3 Feature Description.... 144 Revision HistoryNOTE: Page nu ..
OPA2376AIDGKRG4 ,Precision, Low Noise, Low Quiescent Current Operational Amplifier 8-VSSOP -40 to 125Maximum Ratings.. 610.2 Layout Example....... 226.2 ESD Ratings........ 611 Device and Documentatio ..
OPA2376AIDGKTG4 ,Precision, Low Noise, Low Quiescent Current Operational Amplifier 8-VSSOP -40 to 125Features 3 DescriptionThe OPA376 family represents a new generation of1• Low Noise: 7.5 nV/√Hz at 1 ..
OPA2376AIDR ,Precision, Low Noise, Low Quiescent Current Operational Amplifier 8-SOIC -40 to 125Sample & Support & ReferenceProduct Tools &TechnicalCommunityBuy DesignFolder Documents SoftwareOPA ..
OPA2376AIDRG4 ,Precision, Low Noise, Low Quiescent Current Operational Amplifier 8-SOIC -40 to 125Features... 18 Application and Implementation...... 172 Applications..... 18.1 Application Informat ..
NSS30101LT1G
30 V, 2 A, Low VCE(sat) NPN Transistor
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Max UnitOFF CHARACTERISTICSCollector−Emitter Breakdown Voltage V Vdc(BR)CEO(I = 10 mAdc, I = 0) 30 −C BCollector−Base Breakdown Voltage V Vdc(BR)CBO(I = 0.1 mAdc, I = 0) 50 −C EEmitter−Base Breakdown Voltage V Vdc(BR)EBO(I = 0.1 mAdc, I = 0) 5.0 −E CCollector Cutoff Current I AdcCBO(V = 30 Vdc, I = 0) − 0.1CB ECollector−Emitter Cutoff Current I AdcCES(V = 30 Vdc) − 0.1CESEmitter Cutoff Current I AdcEBO(V = 4.0 Vdc) − 0.1EBON CHARACTERISTICSDC Current Gain (Note 3) hFE(I = 50 mA, V = 5.0 V) 300 −C CE(I = 0.5 A, V = 5.0 V) 300 900C CE(I = 1.0 A, V = 5.0 V) 200 −C CECollector−Emitter Saturation Voltage (Note 3) V VCE(sat)(I = 1.0 A, I = 100 mA) − 0.200C B(I = 0.5 A, I = 50 mA) − 0.125C B(I = 0.1 A, I = 1.0 mA) − 0.075C BBase−Emitter Saturation Voltage (Note 3) V VBE(sat)(I = 1.0 A, I = 0.1 A) − 1.1C BBase−Emitter Turn−on Voltage (Note 3) V VBE(on)(I = 1.0 mA, V = 2.0 V) − 1.1C CECutoff Frequency f MHzT(I = 100 mA, V = 5.0 V, f = 100 MHz 100 −C CEOutput Capacitance (f = 1.0 MHz) C pFobo− 153. Pulsed Condition: Pulse Width = 300 sec, Duty Cycle ≤ 2%1.0 1.00.9 0.9I = 2 AC0.8 0.80.7 0.7I = 1 AC0.6 0.60.5 0.5I /I = 100c b0.4 0.40.3 0.3I /I = 10c bI = 500 mA0.2 C 0.20.1 0.1I = 100 mAC0 00.001 0.01 0.1 0.2 0.001 0.01 0.1 1 2I (A) I (A)b cFigure 1. V versus I Figure 2. V versus ICE b CE c
