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NSS20300MR6T1GONN/a10200avaiPNP Transistor


NSS20300MR6T1G ,PNP TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typical Max ..
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NSS20300MR6T1G
PNP Transistor
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typical Max UnitOFF CHARACTERISTICSCollector−Emitter Breakdown Voltage V Vdc(BR)CEO(I = −10 mAdc, I = 0) −20 −C BCollector−Base Breakdown Voltage V Vdc(BR)CBO(I = −0.1 mAdc, I = 0) −30 −C EEmitter−Base Breakdown Voltage V Vdc(BR)EBO(I = −0.1 mAdc, I = 0) −6.0 −E CCollector Cutoff Current I AdcCBO(V = −20 Vdc, I = 0) − −0.1CB ECollector−Emitter Cutoff Current I AdcCES(V = −20 Vdc) − −0.1CESEmitter Cutoff Current I AdcEBO(V = −6.0 Vdc) − −0.1EBON CHARACTERISTICS(1)DC Current Gain hFE(I = −1.0 A, V = −1.5 V) 100 −C CE(I = −1.5 A, V = −2.0 V) 100 400C CE(I = −2.0 A, V = −2.0 V) 100 −C CECollector−Emitter Saturation Voltage (Note 3) V VCE(sat)(I = −0.10 A, I = −0.010 A) − − −0.015C B(I = −1.0 A, I = −0.010 A) − − −0.145C B(I = −2.0 A, I = −0.02 A) − − −0.320C BBase−Emitter Saturation Voltage (Note 3) V VBE(sat)(I = −1A, I = −0.010 A) − − −0.85C BBase−Emitter Turn−on Voltage (Note 3) V VBE(on)(I = −2.0 A, V = −3.0 V) − − −0.875C CECutoff Frequency f MHzT(I = −100 mA, V = −5.0 V, f = 100 MHz) 100 − −C CEInput Capacitance (V = −0.5 V, f = 1.0 MHz) Cibo − 650 pFEBOutput Capacitance (V = −3.0 V, f = 1.0 MHz) Cobo − 100 pFCB3. Pulsed Condition: Pulse Width ≤ 300 sec, Duty Cycle ≤ 2%
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