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NM27C256QE250 from NS, National Semiconductor 6000pcs , DIP, 256K-Bit (32K x 8) High Performance CMOS EPROM
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NM27C256QE250 NS N/a 6000

Electrical Characteristics Over Operating Range with V = VPP CCSymbol Parameter Test Conditions Min Max UnitsV Input Low Level -0.5 0.8 VILV Input High Level 2.0 V +1 VIH CCV Output Low Voltage I = 2.1 mA 0.4 VOL OLV Output High Voltage I = -2.5 mA 3.5 VOH OHI V Standby Current CE = V ±0.3V 100 μASB1 CC CC(Note 11) (CMOS)I V Standby Current (TTL) CE = V 1mASB2 CC IHI V Active Current CE = OE = V ,f=5 MHz 35 mACC1 CC ILTTL Inputs Inputs = V or V , I/O = 0 mAIH ILI V Supply Current V = V 10 μAPP PP PP CCV V Read Voltage V - 0.7 V VPP PP CC CCI Input Load Current V = 5.5V or GND -1 1 μALI INI Output Leakage Current V = 5.5V or GND -10 10 μALO OUTAC

NM27C256QE250 , 256K-Bit (32K x 8) High Performance CMOS EPROMElectrical Characteristics Over Operating Range with V = VPP CCSymbol Parameter Test Conditions Min ..
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