| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| NLV32T-221J-PF |
TDK |
N/a |
48000 |
 |
For General Applications SMD |
| NLV32T-221J-PF |
|
N/a |
25667 |
|
For General Applications SMD |
NLV32T-221J-PF(1210-220UH) TDK
NLV32T-270J-PF TDK, For General Applications SMD
NLV32T-270J-PF , For General Applications SMD
NLV32T-2R2J/3225-2.2UH TDK
NLV32T-2R2J-PF TDK, For General Applications SMD
NLV32T-2R2J-PF , For General Applications SMD
NLV32T-2R2J-PF(1210-2.2UH) TDK
NLV32T-2R2T-PF TDK
NLV32T-2R7J-PF TDK, For General Applications SMD
NLV32T-2R7J-PF , For General Applications SMD
NLV32T-2R7J-PFD TDK
NLV32T-2R7J-PFD
NLV32T-330J-PF TDK, For General Applications SMD
NLV32T-330J-PF , For General Applications SMD
NLV32T-221J-PF , For General Applications SMD
NLV32T-331J-PF , For General Applications SMD
NLV32T-331J-PF , For General Applications SMD
NLV32T-331J-PF , For General Applications SMD
NLV32T-390J-PF , For General Applications SMD
NX5032SA , Crystal Units For Mobile Communications
NX5306EH ,1310 nm InGaAsP MQW FP laser diode for 155 Mb/s, 622 Mb/s and 1.25 Gb/s applications.PRELIMINARY DATA SHEET NEC's 1310 nm InGaAsP MQW FP LASER DI ODE IN CAN PACKAGE NX5306 SeriesFOR 15 ..
NX5504EK ,1550 nm InGaAsP MQW-FP laser diode for 155 Mb/s, 622 Mb/s applications.FEATURES• OPTICAL OUTPUT POWER PO = 5.0 mW• LOW THRESHOLD CURRENT Ith = 8 mA• HIGH SPE ..
