Partno |
Mfg |
Dc |
Qty |
Available | Descript |
NLC322522T-4R7K-N |
YAGEO |
N/a |
1659 |
|
|
NLC453232T-100K-PF , Inductors for Decoupling Circuits Wound/For Current
NLC453232T-100K-PF , Inductors for Decoupling Circuits Wound/For Current
NLC453232T-4R7K-PF , Inductors for Decoupling Circuits Wound/For Current
NLC453232T-4R7K-PF , Inductors for Decoupling Circuits Wound/For Current
NLC565050T-331K-PF , Inductors for Decoupling Circuits
NTHD4508NT1 ,Power MOSFET 20 V, 3.1 A, Dual N-Channel, ChipFET™ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Conditions Min T ..
NTHD4508NT1G ,Power MOSFET 20 V, 3.1 A, Dual N-Channel, ChipFET™2NTHD4508NTYPICAL PERFORMANCE CURVES (T = 25°C unless otherwise noted)J88V = 5 V to 3 VGST = 25°CJ ..
NTHD4N02FT1 ,Power MOSFET and Schottky Diode 20 V, 2.7A, N-Channel, w/1.0 A Schottky Barrier Diode, ChipFET™2NTHD4N02FTYPICAL MOSFET PERFORMANCE CURVES (T = 25°C unless otherwise noted)J88V = 5 V to 3 VGST = ..