NLAS4501DTT1G ,Single SPST Analog Switch3NLAS4501ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted)LimitV VCC ..
NLAS4599 ,SPDT Analog SwitchAND8058/DTwo New Analog SwitchesSet Standards for SpaceEfficiencyPrepared by: Fred Zlotnick
NLAS4599DFT2 ,SPDT Analog SwitchON SemiconductorAPPLICATION NOTEINTRODUCTION breakdown greater than 7.0 V, low R , and excellent hi ..
NLAS4599DFT2G , Low Voltage Single Supply SPDT Analog Switch
NLAS4599DTT1G , Low Voltage Single Supply SPDT Analog Switch
NLAS4684 ,Dual SPDT .5 Ohm Analog SwitchMaximum ratings applied to the device are individual stress limitvalues (not normal operating condi ..
NTGS3433 ,MOSFET -3.3 Amps, -12 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Notes 3 & 4)ACharacteristic Symbol Mi ..
NTGS3433T1 ,MOSFET -3.3 Amps, -12 VoltsMAXIMUM RATINGS (T = 25°C unless otherwise noted.)JP−ChannelRating Symbol Value Unit12 5 6DRAINDrai ..
NTGS3433T1G , MOSFET -3.3 Amps, -12 Volts
NTGS3441 ,Power MOSFET 1 Amp, 20 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Notes 4 & 5)ACharacteristic Symbol Mi ..
NTGS3441T1 ,Power MOSFET 1 Amp, 20 VoltsMAXIMUM RATINGS (T = 25°C unless otherwise noted)JRating Symbol Value Unit3Drain−to−Source Voltage ..
NTGS3441T1G ,Power MOSFET 1 Amp, 20 VoltsELECTRICAL CHARACTERISTICS1200 8V = 0 V V = 0 V T = 25°CDS GS JCiss900 6QTCrss600 4Ciss Q Qgs gdV = ..
NLAS4501DTT1G
Single SPST Analog Switch
3NLAS4501ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted)LimitV VCC CC25°CSymbol Parameter Condition V UnitBW BW Maximum On Maximum On−Channel Channel −3dB Bandwidth or 3dB Bandwidth or V V = 0 0 d dBm Bm 3.0 3.0 190 190 MHz MHzIS ISMinimum Frequency Response 200V centered between V and GND 4.5IS IS CC CC220 220(Fi (Figures 6 6 and 14) d 14)5.5V V Maximum Feedthrough On Loss Maximum Feedthrough On Loss V V = 0 dBm @ 10 kHz 0 dBm @ 10 kHz 3.0 3.0 −2 2 dB dBONL ONL IS IS−2V centered between V and GND 4.5IS IS CC CC−2 2(Figure 6) (Fi 6)5.5V V Of Offf−Channel Isolation Channel Isolation 3.0 3.0 −93 93 dB dBf f = 100 kHz; V 100 kHz; V = 1 1 V RMS V RMSISO ISO IS ISV centered between V and GND 4.5IS IS CC CC(Figures (Fi 6 6 and 15) d 15)5.5Q Q Char Charge Injection ge Injection V V V V GND, F GND, F = 20 kHz = 20 kHz 3.0 3.0 1.5 1.5I IS S = = CC CC to to IS ISEnable Input to Common I/O Enable Input to Common I/O tt = t = t = 3 ns = 3 ns 5 5.5 .5 3.0 3.0 pC pCr r ffR R = 0 = 0 , C , C = 1000 pF = 1000 pFIS IS L LQ = C Q = C * V VL L OUT OUT(Figures 7 and 16)THD THD T Total Harmonic Distortion otal Harmonic Distortion 3.3 3.3 0.3 0.3 % %F F = 20 Hz to 1 MHz, R 20 Hz to 1 MHz, R = Rgen = 600 Rgen 600 , C , C = 50 pF 50 pFIS IS L L L LTHD + Noise V = 3.0 V sine wave 5.5 0.15IS IS PP PPV = 5.0 V sine waveIS IS PP PP(Figure 17)1.00E+051.00E+041.00E+031.00E+021.00E+01I1.00E+00 COM(ON)1.00E−011.00E−021.00E−031.00E−04 ICOM(OFF)1.00E−05I1.00E−06NO(OFF)1.00E−07−55 −35 −15 5 25 45 65 85 105 125 145TEMPERATURE (°C)Figure 3. Switch Leakage vs. Temperature
