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NLAS4157DFT2GON SemiconductorN/a15000avaiSPDT, 1 RON Switch


NLAS4157DFT2G ,SPDT, 1 RON SwitchELECTRICAL CHARACTERISTICST = +25°C T = −40°C to +85°CA AV VCC CCSymbol Parameter Test Conditions ( ..
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NLAS4157DFT2G
SPDT, 1 RON Switch
ELECTRICAL CHARACTERISTICST = +25°C T = −40°C to +85°CA AV VCC CCSymbol Parameter Test Conditions (V) Min Typ Max Min Max UnitV HIGH Level 2.7 2.0 VIHInput Voltage 4.5 2.4V LOW Level 2.7 0.6 VILInput Voltage 4.5 0.8I Input Leakage Current 0  V  5.5 V 0−5.5 ±0.1 ±1 AIN INI OFF State Leakage 0  A, B  V 5.5 −2.0 +2.0 ±20 nAOFF CCCurrent (Note 7)I ON State Leakage 0  A, B  V 5.5 −4.0 +4.0 ±40 nAON CCCurrent (Note 7)R Switch On Resistance I = −100 mA, 2.7 2.0 4.0 4.3 ON O(Note 2) B or B = 3.5 V0 1I = −100 mA, 4.5 0.8 1.15 1.3OB or B = 1.5 V0 1I Quiescent Supply V = V or GND, I = 0 5.5 0.5 1.0 ACC IN CC OUTCurrentAll Channels ON or OFFAnalog Signal RangeR On Resistance Match I = −100 mA, 2.7 0.15 ON ABetween Channels B or B = 1.5 V0 1(Notes 2, 3, 4) I = −100 mA, 4.5 0.12 0.15AB or B = 3.5 V0 1R On Resistance I = −100 mA, 2.7 1.4 flat AFlatness (Notes 2, 3, 5) B or B = 0 V, 0.75 V, 1.5 V0 1I = −100 mA, 4.5 0.3 0.4AB or B = 0 V, 1.0 V, 2.0 V0 12. Measured by the voltage drop between A and B pins at the indicated current through the switch. On Resistance is determined by the lowerof the voltages on the two (A or B Ports).3. Parameter is characterized but not tested in production.4. DR = R max − R min measured at identical V , temperature and voltage levels.ON ON ON CC5. Flatness is defined as the difference between the maximum and minimum value of On Resistance over the specified range of conditions.6. Guaranteed by Design.7. This parameter is guaranteed by design but not tested. The bus switch contributes no propagation delay other than the RC delay of the OnResistance of the switch and the 50 pF load capacitance, when driven by an ideal voltage source (zero output impedance).
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