| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| NJU7001D |
JRC |
N/a |
2930 |
 |
LOW VOLTAGE C-MOS OPERATIONAL AMPLIFIER |
NJU7001M(T1) JRC
NJU7001V(TE1) JRC
NJU7001V-TE1 JRC
NJU7002D , LOW VOLTAGE C-MOS OPERATIONAL AMPLIFIER
NJU7002D JRC, LOW VOLTAGE C-MOS OPERATIONAL AMPLIFIER
NJU7002M , LOW VOLTAGE C-MOS OPERATIONAL AMPLIFIER
NJU7002M JRC, LOW VOLTAGE C-MOS OPERATIONAL AMPLIFIER
NJU7002M(T1)
NJU7002M(T1) JRC
NJU7002M(TE1) JRC
NJU7002M(TE3) JRC
NJU7002M.TE1 JRC
NJU7002M-TE1#ZZZB JRC
NJU7002M-TE1#ZZZB. JRC
NJU7001D , LOW VOLTAGE C-MOS OPERATIONAL AMPLIFIER
NJU7004 , LOW VOLTAGE C-MOS OPERATIONAL AMPLIFIER
NJU7004V , LOW VOLTAGE C-MOS OPERATIONAL AMPLIFIER
NJU7006 , SUPER LOW OPERATING CURRENT AND LOW OFFSET VOLTAGE TINY SINGLE C-MOS OPERATIONAL AMPLIFIER
NJU7007F3 , LOW POWER AND LOW OFFSET VOLTAGE SUPER SMALL-SIZED SINGLE C-MOS OPERATIONAL AMPLIFIER
NSL12AWT1 ,High Current Surface Mount PNP Silicon TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typical Max ..
NSL12AWT1 ,High Current Surface Mount PNP Silicon Transistor2NSL12AW0.5 0.50.40.42 A0.3 0.30.20.21 AI /I = 100C B800 mA0.1 0.1I = 100 mA 500 mACI /I = 10C B001 ..
NSQA12VAW5T2 ,Low Capacitance Quad Array for ESD ProtectionFeatures• ESD Protection: IEC61000−4−2: Level 4MILSTD 883C − Method 3015−6: Class 3• Four Separate ..
