| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| NESG2031M05-T1-A |
NEC|NEC |
N/a |
444000 |
 |
NPN SiGe RF Transistor for Low Noise, High-Gain Amplification |
NESG2031M05-T1-A , NPN SiGe RF Transistor for Low Noise, High-Gain Amplification
NESG2031M16 , NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
NESG2031M16-T3 ,NPN SiGe high frequency transistor.ELECTRICAL CHARACTERISTICS (TA = 25°C) ..
NESG2101M05 ,NECs NPN SiGe HIGH FREQUENCY TRAN SIS TORFEATURES• HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum)• HIGH OUTPUT P ..
NESG210833-T1B-A , NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)
NL322522T-471J , SMD
NL322522T-471J , SMD
NL322522T-471J , SMD
