NDT455N ,N-Channel Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25°C unless otherwise noted)ASymbol Parameter Conditions Min Typ Ma ..
NDT455N ,N-Channel Enhancement Mode Field Effect Transistor
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NDT455N
N-Channel Enhancement Mode Field Effect Transistor
July 1996 NDT455N N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field 11.5 A, 30 V. R = 0.015 W @ V = 10 V DS(ON) GS effect transistors are produced using Fairchild's proprietary, high R = 0.02 W @ V = 4.5 V. DS(ON) GS cell density, DMOS technology. This very high density process High density cell design for extremely low R . is especially tailored to minimize on-state resistance, provide DS(ON) superior switching performance, and withstand high energy High power and current handling capability in a widely used pulses in the avalanche and commutation modes. These devices surface mount package. are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed. ________________________________________________________________________________ D D G D S S G Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter NDT455N Units V Drain-Source Voltage 30 V DSS Gate-Source Voltage 20 V V GSS Drain Current - Continuous (Note 1a) ± 11.5 A I D - Pulsed ± 40 P Maximum Power Dissipation (Note 1a) 3 W D (Note 1b) 1.3 (Note 1c) 1.1 T ,T Operating and Storage Temperature Range -65 to 150 °C J STG THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient (Note 1a) 42 °C/W R qJA Thermal Resistance, Junction-to-Case (Note 1) 12 °C/W R JC q © 1997 NDT455N Rev.F
