NDS9959 ,Dual N-Channel Enhancement Mode Field Effect TransistorGeneral Description
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NDS9958
Dual N & P-Channel Enhancement Mode Field Effect Transistor
February 1996 NDS9958 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field N-Channel 3.5A, 20V, R = 0.1W @ V = 10V. DS(ON) GS effect transistors are produced using Fairchild's proprietary, P-Channel -3.5A , -20V, R = 0.1W @ V = -10V. DS(ON) GS high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, High density cell design for extremely low R . DS(ON) provide superior switching performance, and withstand high High power and current handling capability in a widely used energy pulses in the avalanche and commutation modes. These surface mount package. devices are particularly suited for low voltage applications such as notebook computer power management, Half bridge motor Dual (N & P-Channel) MOSFET in surface mount package. control, cellular phone, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. _______________________________________________________________________________ 5 4 3 6 7 2 8 1 Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter N-Channel P-Channel Units Drain-Source Voltage 20 -20 V V DSS V Gate-Source Voltage ± 20 ± 20 V GSS I Drain Current - Continuous T = 25°C (Note 1a) ± 3.5 ± 3.5 A D A - Continuous T = 70°C (Note 1a) ± 2.8 ± 2.8 A - Pulsed T = 25°C ± 14 ± 14 A P Power Dissipation for Dual Operation 2 W D Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9 T ,T Operating and Storage Temperature Range -55 to 150 °C J STG THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W R JA q Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W R JC q © 1997 NDS9958.SAM
