NDS9956 ,Dual N-Channel Enhancement Mode Field Effect TransistorGeneral Description
NDS9956A ,Dual N-Channel Enhancement Mode Field Effect TransistorGeneral Description
NDS9957 ,Dual N-Channel Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25°C unless otherwise noted)ASymbol Parameter Conditions Min Typ Ma ..
NDS9957 ,Dual N-Channel Enhancement Mode Field Effect TransistorFeatures These N-Channel enhancement mode power field effect2.6A, 60V. R = 0.16Ω @ V = 10V. DS(ON ..
NDS9957 ,Dual N-Channel Enhancement Mode Field Effect Transistorapplications suchDual MOSFET in surface mount package.as DC motor control and DC/DC conversion wher ..
NDS9958 ,Dual N & P-Channel Enhancement Mode Field Effect TransistorFebruary 1996 NDS9958Dual N & P-Channel Enhancement Mode Field Effect Transistor
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NDS9956
Dual N-Channel Enhancement Mode Field Effect Transistor
February 1996 NDS9956A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 3.7A, 30V. R = 0.08W @ V = 10V DS(ON) GS transistors are produced using Fairchild's proprietary, high High density cell design for extremely low R . cell density, DMOS technology. This very high density DS(ON) process is especially tailored to minimize on-state resistance, High power and current handling capability in a widely used provide superior switching performance, and withstand high surface mount package. energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage Dual MOSFET in surface mount package. applications such as DC/DC conversion and DC motor control where fast switching, low in-line power loss, and resistance to transients are needed. ________________________________________________________________________________ 4 5 3 6 7 2 1 8 Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter NDS9956A Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ± 20 V GSS I Drain Current - Continuous (Note 1a) ± 3.7 A D - Pulsed ± 15 Power Dissipation for Dual Operation 2 W P D Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9 T ,T Operating and Storage Temperature Range -55 to 150 °C J STG THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W R JA q Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W R qJC © 1997 NDS9956A.SAM
