NDS9430A ,Single P-Channel Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25°C unless otherwise noted)ASymbol Parameter Conditions Min Typ Ma ..
NDS9430A ,Single P-Channel Enhancement Mode Field Effect TransistorDecember 1997 NDS9430ASingle P-Channel Enhancement Mode Field Effect Transistor
NDS9430A ,Single P-Channel Enhancement Mode Field Effect Transistorapplications suchas notebook computer power management and other batterypowered circuits where fas ..
NDS9430A ,Single P-Channel Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25°C unless otherwise noted)ASymbol Parameter Conditions Min Typ Ma ..
NDS9430A ,Single P-Channel Enhancement Mode Field Effect TransistorFeaturesThese P-Channel enhancement mode power field effect -5.3A, -20V. R = 0.05Ω @ V = -10V ..
NDS9435A ,30V P-Channel PowerTrench MOSFETNDS9435A January 2002 NDS9435A 30V P-Channel PowerTrench MOSFET
NJU7004 , LOW VOLTAGE C-MOS OPERATIONAL AMPLIFIER
NJU7004V , LOW VOLTAGE C-MOS OPERATIONAL AMPLIFIER
NJU7006 , SUPER LOW OPERATING CURRENT AND LOW OFFSET VOLTAGE TINY SINGLE C-MOS OPERATIONAL AMPLIFIER
NJU7007F3 , LOW POWER AND LOW OFFSET VOLTAGE SUPER SMALL-SIZED SINGLE C-MOS OPERATIONAL AMPLIFIER
NJU7018R , LOW-VOLTAGE OPERATION DUAL C-MOS OPERATIONAL AMPLIFIER
NJU7021M , LOW VOLTAGE C-MOS OPERATIONAL AMPLIFIER
NDS9430A
Single P-Channel Enhancement Mode Field Effect Transistor
December 1997 NDS9430A Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect -5.3A, -20V. R = 0.05W @ V = -10V DS(ON) GS R = 0.065W @ V = -6V transistors are produced using National's proprietary, high cell DS(ON) GS density, DMOS technology. This very high density process is R = 0.09W @ V = -4.5V. DS(ON) GS especially tailored to minimize on-state resistance, provide High density cell design for extremely low R DS(ON). superior switching performance, and withstand high energy High power and current handling capability in a widely used pulses in the avalanche and commutation modes. These surface mount package. devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. ___________________________________________________________________________________________ 4 5 3 6 7 2 8 1 Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter NDS9430A Units V Drain-Source Voltage -20 V DSS V Gate-Source Voltage ± 20 V GSS I Drain Current - Continuous (Note 1a) ± 5.3 A D - Pulsed ± 20 P Maximum Power Dissipation (Note 1a) 2.5 W D (Note 1b) 1.2 (Note 1c) 1 T ,T Operating and Storage Temperature Range -55 to 150 °C J STG THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W R qJA Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W R JC q © 1997 NDS9430A Rev.A
