NDP5060 ,N-Channel Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25°C unless otherwise noted)CSymbol Parameter Conditions Min Typ Ma ..
NDP6020 ,N-Channel Logic Level Enhancement Mode Field Effect TransistorGeneral DescriptionLogic Level Enhancement Mode Field Effect Transistor / NDB6020 NDP6020 (TCV µ A ..
NDP6020P ,P-Channel Logic Level Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25°C unless otherwise noted)CI ASI AV V I VV t FFAI°Rθ°RθNote:<
NDP6020P. ,P-Channel Logic Level Enhancement Mode Field Effect TransistorGeneral Description Enhancement Mode Field Effect Transistor / NDB6020P NDP6020P September (T = 2 ..
NDP6030L ,N-Channel Logic Level Enhancement Mode Field Effect TransistorGeneral Description N-Channel Logic Level Enhancement Mode Field Effect Transistor NDP6030L / NDB60 ..
NDP603AL ,N-Channel Logic Level Enhancement Mode Field Effect TransistorFeaturesThese N-Channel logic level enhancement mode power25A, 30V. R = 0.022Ω @ V =10V.DS(ON) GSf ..
NJU3711M , 8-BIT SERIAL TO PARALLEL CONVERTER
NJU3711M , 8-BIT SERIAL TO PARALLEL CONVERTER
NJU3712D , 8-BIT SERIAL TO PARALLEL CONVERTER
NJU3715G , 16-BIT SERIAL TO PARALLEL CONVERTER
NJU3718G , 20-BIT SERIAL TO PARALLEL CONVERTER
NJU39610 , MICROSTEPPING MOTOR CONTROLLER WITH DUAL DAC
NDP5060
N-Channel Enhancement Mode Field Effect Transistor
October 1996 NDP5060 / NDB5060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 26 A, 60 V. R = 0.05 W @ V = 10 V. DS(ON) GS transistors are produced using Fairchild's proprietary, high cell Critical DC electrical parameters specified at elevated density, DMOS technology. This very high density process has temperature. been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high Rugged internal source-drain diode can eliminate the need energy pulses in the avalanche and commutation modes. for an external Zener diode transient suppressor. These devices are particularly suited for low voltage 175°C maximum junction temperature rating. applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast High density cell design for extremely low R . DS(ON) switching, low in-line power loss, and resistance to transients 2 TO-220 and TO-263 (D PAK) package for both through hole are needed. and surface mount applications. ________________________________________________________________________________ D G S Absolute Maximum Ratings T = 25°C unless otherwise note C Symbol Parameter NDP5060 NDB5060 Units V Drain-Source Voltage 60 V DSS 60 V V Drain-Gate Voltage (R < 1 MW) DGR GS V Gate-Source Voltage - Continuous ±20 V GSS ±40 - Nonrepetitive (t < 50 µs) P I Drain Current - Continuous 26 A D - Pulsed 78 P Total Power Dissipation @ T = 25°C 68 W D C Derate above 25°C 0.45 W/°C T ,T Operating and Storage Temperature Range -65 to 175 °C J STG © 1997 NDP5060 Rev.A
