NDF06N62Z ,Power MOSFET 620V 1.2 Ohm Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Test Conditions Symbol ..
NDF06N62ZG , N-Channel Power MOSFET 620 V, 0.98 ,
NDF08N50Z ,Power MOSFET 500V 0.850 Ohm Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Test Conditions Symbol ..
NDF08N50ZG , N-Channel Power MOSFET 500 V, 0.69
NDF08N60Z ,Power MOSFET 600V 0.95 Ohm Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Test Conditions Symbol ..
NDF08N60ZG , N-Channel Power MOSFET 600 V, 0.95 Ω
NJM79M09A , 3-TERMINAL NEGATIVE VOLTAGE REGULATOR
NJM79M12A , 3-TERMINAL NEGATIVE VOLTAGE REGULATOR
NJMDAC-08MC , 8-BIT HIGH SPEED MULTIPLYING D/A CONVERTER
NJMDAC-08MC , 8-BIT HIGH SPEED MULTIPLYING D/A CONVERTER
NJMOP-07D , ULTRA-LOW OFFSET VOLTAGE, LOW DRIFT OPERATIONAL AMPLIFIER
NJSW036AT , TYPE WHITE LED
NDF06N62Z
Power MOSFET 620V 1.2 Ohm Single N-Channel
NDF06N62Z
N-Channel Power MOSFET
620 V , 1.2 �
Features Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)Stresses exceeding Maximum Ratings may damage the device. MaximumRatings are stress ratings only. Functional operation above the RecommendedOperating Conditions is not implied. Extended exposure to stresses above theRecommended Operating Conditions may affect device reliability. Limited by maximum junction temperature2. ISD = 6.0 A, di/dt ≤ 100 A/�s, VDD ≤ BVDSS, TJ = +150°C
